Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

US Patent 10193014 · Granted Jan 29, 2019

Estimated economic value: $20,450,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Digital image radial pattern decoding system2025
Plasma chamber with gas cross-flow, microwave resonators and a rotatable pedesta2025
High quality quantum computer components2025
Multi-language program and data flow analysis using LLM2025
System method for vehicle bootloader image authentication using random number ge2025
Methods for forming structures with desired crystallinity for MRAM applications2025
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy2025
Metal oxide preclean for bottom-up gapfill in MEOL and BEOL2025
One chamber multi-station selective metal removal2025
Shutter disk for physical vapor deposition (PVD) chamber2025
SNSPD with integrated aluminum nitride seed or waveguide layer2025
SNSPD with integrated aluminum nitride seed or waveguide layer2025