Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor material having a compositionally-graded transition layer

Semiconductor material having a compositionally-graded transition layer

US Patent 10177229 · Granted Jan 8, 2019

Estimated economic value: $16,955,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Parasitic channel mitigation in semiconductor structures2025
Light emitting diodes with n-polarity and associated methods of manufacturing2025
Incorporating semiconductors on a polycrystalline diamond substrate2024
Light emitting diodes with n-polarity and associated methods of manufacturing2023
Parasitic channel mitigation using silicon carbide diffusion barrier regions2023
Toggle control for lighting system2022
Antimicrobial light source array system2022
Parasitic channel mitigation using silicon carbide diffusion barrier regions2022
Light emitting diodes with n-polarity and associated methods of manufacturing2021
Light emitting diodes and associated methods of manufacturing2021
Toggle control for lighting system2021
Material selective regrowth structure and method2021