Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single-diffusion break structure for fin-type field effect transistors

Single-diffusion break structure for fin-type field effect transistors

US Patent 10177151 · Granted Jan 8, 2019

Estimated economic value: $16,909,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Inhibitors of NLRP3 inflammasome2025
Anti-GAL3 antibodies and uses thereof2025
Global-shutter pixel2025
Pixel with vertical transfer structure for dark current improvement, an image se2025
Central deep trench isolation shift2025
High dynamic range, backside-illuminated, low crosstalk image sensor with walls 2025
Distributed synchronous training architecture using stale weights2025
Formation of trench silicide source or drain contacts without gate damage2025
CMOS devices with asymmetrically passivated isolation structure and methods ther2025
Temperature dependent refresh read rate2025
Gate oxide formation for fin field-effect transistor2025
Image sensor diagonal isolation structures2025