Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier

Ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier

US Patent 10079240 · Granted Sep 18, 2018

Estimated economic value: $9,606,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Interferon regulatory factor 5 inhibitors and uses thereof2025
Method for fabricating a damascene self-aligned ferroelectric random access memo2019
2T1C ferro-electric random access memory cell2019
Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access me2019
2T1C ferro-electric random access memory cell2018
Ferroelectric random-access memory with pre-patterned oxygen barrier2017
Hydrogen barriers in a copper interconnect process2017
Enhanced hydrogen barrier encapsulation method for the control of hydrogen induc2017
Methods of fabricating an F-RAM2017
Hybrid reference generation for ferroelectric random access memory2016
Method for fabricating ferroelectric random-access memory on pre-patterned botto2016
Method for fabricating a damascene self-aligned ferroelectric random access memo2016