{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Metal nitride keyhole or spacer phase change memory cell structures", "item": "https://www.patentleaderboard.com/patent/10056546"}]}
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Home › Metal nitride keyhole or spacer phase change memory cell structures

Metal nitride keyhole or spacer phase change memory cell structures

US Patent 10056546 · Granted Aug 21, 2018

Estimated economic value: $2,787,000 ⓘ

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