Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › III-nitride nanowire LED with strain modified surface active region and method of making thereof

III-nitride nanowire LED with strain modified surface active region and method of making thereof

US Patent 10026866 · Granted Jul 17, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reel2025
Pixel for micro-display having vertically stacked sub-pixels2025
Unit pixel for red-green-cyan-blue (RGCB) micro-display having vertically stacke2025
Pull to turn lever drag preset knob2025
Quick coupling2024
Frame for a touch-sensitive device and tool therefor2024
Micro light emitting devices2023
Splitting line guide2023
Magnetic casting brake2023
Pixel of micro display having inclined side2023
Indium gallium nitride red light emitting diode and method of making thereof2023
Pixel for micro display and method of manufacturing the same2022