Issued Patents All Time
Showing 51–75 of 152 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9401452 | P-side layers for short wavelength light emitters | John E. Northrup, Bowen Cheng, Thomas Wunderer, Noble M. Johnson, Zhihong Yang | 2016-07-26 |
| 9335262 | Gap distributed Bragg reflectors | Thomas Wunderer, Brent S. Krusor, Noble M. Johnson | 2016-05-10 |
| 9252329 | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction | John E. Northrup, Michael A. Kneissl, Thomas Wunderer, Noble M. Johnson | 2016-02-02 |
| 9219189 | Graded electron blocking layer | John E. Northrup, Bowen Cheng, Thomas Wunderer, Noble M. Johnson, Zhihong Yang +1 more | 2015-12-22 |
| 9171992 | Ultraviolet light emitting device incorporating optically absorbing layers | — | 2015-10-27 |
| 9166375 | Vertical surface emitting semiconductor device | Andre Strittmatter, Peter Kiesel, Noble M. Johnson, Joerg Martini | 2015-10-20 |
| 9099344 | Fabrication for electroplating thick metal pads | Clifford F. Knollenberg, Mark R. Teepe | 2015-08-04 |
| 9064980 | Devices having removed aluminum nitride sections | Brent S. Krusor, Thomas Wunderer, Noble M. Johnson | 2015-06-23 |
| 8964796 | Structure for electron-beam pumped edge-emitting device and methods for producing same | Thomas Wunderer, John E. Northrup, Mark R. Teepe, Zhihong Yang, Noble M. Johnson | 2015-02-24 |
| 8908161 | Removing aluminum nitride sections | Brent S. Krusor, Thomas Wunderer, Noble M. Johnson, Bowen Cheng | 2014-12-09 |
| 8852980 | Laser-induced flaw formation in nitride semiconductors | Clifford F. Knollenberg, William S. Wong | 2014-10-07 |
| 8822314 | Method of growing epitaxial layers on a substrate | Mark R. Teepe, Thomas Wunderer, Zhihong Yang, Noble M. Johnson, Clifford F. Knollenberg | 2014-09-02 |
| 8748919 | Ultraviolet light emitting device incorporating optically absorbing layers | — | 2014-06-10 |
| 8652878 | Stress-engineered interconnect packages with activator-assisted molds | Bowen Cheng, Eugene M. Chow, Dirk De Bruyker | 2014-02-18 |
| 8581263 | Laser-induced flaw formation in nitride semiconductors | Clifford F. Knollenberg, William S. Wong | 2013-11-12 |
| 8571817 | Integrated vapor delivery systems for chemical vapor deposition precursors | David P. Bour, Zhihong Yang | 2013-10-29 |
| 8513643 | Mixed alloy defect redirection region and devices including same | Zhihong Yang, Noble M. Johnson | 2013-08-20 |
| 8468939 | Printing system employing deformable polymer printing plates | Jurgen H. Daniel, Dirk De Bruyker, David K. Fork | 2013-06-25 |
| 8470619 | Selective decomposition of nitride semiconductors to enhance LED light extraction | David P. Bour, Clifford F. Knollenberg | 2013-06-25 |
| 8405198 | Stress-engineered interconnect packages with activator-assisted molds | Bowen Cheng, Eugene M. Chow, Dirk De Bruyker | 2013-03-26 |
| 8399296 | Airgap micro-spring interconnect with bonded underfill seal | Bowen Cheng, Eugene M. Chow, Dirk De Bruyker | 2013-03-19 |
| 8354689 | Light emitting devices having dopant front loaded tunnel barrier layers | Zhihong Yang | 2013-01-15 |
| 8330144 | Semi-polar nitride-based light emitting structure and method of forming same | Andre Strittmatter, Noble M. Johnson, Mark R. Teepe, Zhihong Yang, John E. Northrup | 2012-12-11 |
| 8318542 | Contact spring application to semiconductor devices | Eugene M. Chow, Eric Peeters | 2012-11-27 |
| 8247249 | Semi-polar nitride-based light emitting structure and method of forming same | Andre Strittmatter, Noble M. Johnson, Mark R. Teepe, Zhihong Yang, John E. Northrup | 2012-08-21 |