SI

Shoichi Iwasa

NS Nippon Steel: 25 patents #27 of 4,423Top 1%
NE Nec: 5 patents #2,830 of 14,502Top 20%
UM United Microelectronics: 3 patents #1,523 of 4,560Top 35%
Overall (All Time): #108,977 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 1–25 of 33 patents

Patent #TitleCo-InventorsDate
6917076 Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device Kohei Eguchi, Yuichi Egawa, Hideki Fujikake, Wataru Yokozeki, Tatsuya Kawamata 2005-07-12
6657229 Semiconductor device having multiple transistors sharing a common gate Kohei Eguchi, Yuichi Egawa, Hideki Fujikake, Wataru Yokozeki, Tatsuya Kawamata 2003-12-02
6468887 Semiconductor device and a method of manufacturing the same Tatsuya Kawamata 2002-10-22
6313509 Semiconductor device and a MOS transistor for circuit protection 2001-11-06
6288431 Semiconductor device and a method of manufacturing the same Tatsuya Kawamata 2001-09-11
6124638 Semiconductor device and a method of manufacturing the same 2000-09-26
6060350 Semiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing same 2000-05-09
6051466 Method of making a semiconductor device with a stacked cell structure 2000-04-18
5959319 Semiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing same 1999-09-28
5814850 Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage 1998-09-29
5798545 Semiconductor storage device Tomofune Tani 1998-08-25
5747845 Semiconductor memory device with memory cells each having transistor and capacitor and method of making the same 1998-05-05
5686746 Semiconductor memory device and a method of making the same 1997-11-11
5663103 Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor Takeshi Naganuma 1997-09-02
5644151 Semiconductor memory device and method for fabricating the same Hirohiko Izumi 1997-07-01
5596527 Electrically alterable n-bit per cell non-volatile memory with reference cells Yugo Tomioka, Yasuo Sato, Toshio Wada, Kenji Anzai 1997-01-21
5572464 Semiconductor memory device and method of using the same 1996-11-05
5569947 Insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor Takeshi Naganuma 1996-10-29
5530276 Nonvolatile semiconductor memory device 1996-06-25
5471423 Non-volatile semiconductor memory device 1995-11-28
5436481 MOS-type semiconductor device and method of making the same Yuichi Egawa, Toshio Wada 1995-07-25
5424978 Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same Toshio Wada, Kenji Anzai, Yasuo Sato, Yuichi Egawa 1995-06-13
5418743 Method of writing into non-volatile semiconductor memory Yugo Tomioka, Yasuo Sato, Toshio Wada, Kenji Anzai 1995-05-23
5396120 Semiconductor integrated unit Kouhei Eguchi 1995-03-07
5381028 Nonvolatile semiconductor memory with raised source and drain 1995-01-10