Issued Patents All Time
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10804432 | Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same | Katsuhiro Imai, Mikiya Ichimura, Takayuki Hirao | 2020-10-13 |
| 10770552 | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements | Mikiya Ichimura, Sota MAEHARA | 2020-09-08 |
| 10734548 | Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same | Katsuhiro Imai, Mikiya Ichimura, Takayuki Hirao | 2020-08-04 |
| 10707373 | Polycrystalline gallium nitride self-supported substrate and light emitting element using same | Morimichi Watanabe, Kei Sato, Katsuhiro Imai, Tsutomu Nanataki | 2020-07-07 |
| 10629688 | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements | Mikiya Ichimura, Sota MAEHARA | 2020-04-21 |
| 10598369 | Heat discharge structures for light source devices and light source systems | Masahiko Namerikawa, Takashi Yoshino, Katsuhiro Imai | 2020-03-24 |
| 10580646 | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements | Mikiya Ichimura, Sota MAEHARA | 2020-03-03 |
| 10541514 | Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device | Kentaro NONAKA, Tomohiko Sugiyama, Takashi Yoshino | 2020-01-21 |
| 10418239 | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements | Mikiya Ichimura, Sota MAEHARA | 2019-09-17 |
| 10410859 | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements | Mikiya Ichimura, Sota MAEHARA | 2019-09-10 |
| 10347755 | Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate | Mikiya Ichimura, Makoto Iwai | 2019-07-09 |
| 10332975 | Epitaxial substrate for semiconductor device and method for manufacturing same | Mikiya Ichimura, Sota MAEHARA | 2019-06-25 |
| 10128406 | GaN template substrate | Mikiya Ichimura, Masahiko Namerikawa | 2018-11-13 |
| 10030318 | Composite substrate, method for fabricating same, function element, and seed crystal substrate | Yasunori Iwasaki, Takashi Yoshino | 2018-07-24 |
| 9882042 | Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate | Mikiya Ichimura, Makoto Iwai | 2018-01-30 |
| 9768352 | Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same | Morimichi Watanabe, Jun Yoshikawa, Tsutomu Nanataki | 2017-09-19 |
| 9660138 | Light emitting device and method for manufacturing light emitting device | Shohei Oue, Masahiko Namerikawa, Morimichi Watanabe | 2017-05-23 |
| 9653649 | Gallium nitride substrates and functional devices | Makoto Iwai, Masahiro Sakai, Katsuhiro Imai | 2017-05-16 |
| 9653651 | Light emitting device and method for manufacturing light emitting device | Shohei Oue, Masahiko Namerikawa, Morimichi Watanabe | 2017-05-16 |
| 9543473 | Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same | Morimichi Watanabe, Jun Yoshikawa, Tsutomu Nanataki | 2017-01-10 |
| 9231155 | Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices | Makoto Iwai | 2016-01-05 |
| 9196480 | Method for treating group III nitride substrate and method for manufacturing epitaxial substrate | Tomohiko Sugiyama, Sota MAEHARA | 2015-11-24 |
| 9171914 | Semiconductor device | Makoto Miyoshi | 2015-10-27 |
| 8890208 | Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device | Makoto Miyoshi, Shigeaki Sumiya, Mitsuhiro Tanaka | 2014-11-18 |
| 8872226 | Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device | Makoto Miyoshi, Shigeaki Sumiya, Mitsuhiro Tanaka | 2014-10-28 |