Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9478650 | Semiconductor device, HEMT device, and method of manufacturing semiconductor device | Tomohiko Sugiyama, Sota MAEHARA, Mitsuhiro Tanaka | 2016-10-25 |
| 9090993 | Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate | Makoto Miyoshi, Mikiya Ichimura, Tomohiko Sugiyama, Mitsuhiro Tanaka | 2015-07-28 |
| 8969880 | Epitaxial substrate and method for manufacturing epitaxial substrate | Makoto Miyoshi, Mikiya Ichimura, Sota MAEHARA, Mitsuhiro Tanaka | 2015-03-03 |
| 8946723 | Epitaxial substrate and method for manufacturing epitaxial substrate | Makoto Miyoshi, Mikiya Ichimura, Sota MAEHARA, Mitsuhiro Tanaka | 2015-02-03 |
| 8890208 | Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device | Makoto Miyoshi, Yoshitaka Kuraoka, Mitsuhiro Tanaka | 2014-11-18 |
| 8872226 | Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device | Makoto Miyoshi, Yoshitaka Kuraoka, Mitsuhiro Tanaka | 2014-10-28 |
| 8853828 | Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device | Makoto Miyoshi, Tomohiko Sugiyama, Mikiya Ichimura, Yoshitaka Kuraoka, Mitsuhiro Tanaka | 2014-10-07 |
| 8648351 | Epitaxial substrate and method for manufacturing epitaxial substrate | Makoto Miyoshi, Mikiya Ichimura, Sota MAEHARA, Mitsuhiro Tanaka | 2014-02-11 |
| 8598626 | Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure | Makoto Miyoshi, Yoshitaka Kuraoka, Mikiya Ichimura, Tomohiko Sugiyama, Mitsuhiro Tanaka | 2013-12-03 |
| 8471265 | Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereof | Makoto Miyoshi, Mikiya Ichimura, Sota MAEHARA, Mitsuhiro Tanaka | 2013-06-25 |
| 8415690 | Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element | Makoto Miyoshi, Mikiya Ichimura, Mitsuhiro Tanaka | 2013-04-09 |
| 8410552 | Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device | Makoto Miyoshi, Yoshitaka Kuraoka, Mikiya Ichimura, Tomohiko Sugiyama, Mitsuhiro Tanaka | 2013-04-02 |
| 8404045 | Method for manufacturing group III nitride single crystals | Yoshitaka Kuraoka, Makoto Miyoshi, Minoru Imaeda | 2013-03-26 |
| 8378386 | Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device | Makoto Miyoshi, Yoshitaka Kuraoka, Mikiya Ichimura, Tomohiko Sugiyama, Mitsuhiro Tanaka | 2013-02-19 |
| 7982241 | Epitaxial substrate, semiconductor device substrate, and HEMT device | Yoshitaka Kuraoka, Makoto Miyoshi, Mitsuhiro Tanaka | 2011-07-19 |
| 7771849 | Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth | Tomohiko Shibata | 2010-08-10 |
| 7713847 | Method for forming AlGaN crystal layer | Kei Kosaka, Tomohiko Shibata | 2010-05-11 |
| 7687824 | Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device | Tomohiko Shibata, Keiichiro Asai | 2010-03-30 |
| 7632741 | Method for forming AlGaN crystal layer | Kei Kosaka, Tomohiko Shibata | 2009-12-15 |
| 6869702 | Substrate for epitaxial growth | Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka | 2005-03-22 |
| 6844611 | III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal | Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka | 2005-01-18 |
| 6805982 | Epitaxial substrates and semiconductor devices | Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka | 2004-10-19 |
| 6770914 | III nitride semiconductor substrate for ELO | Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka | 2004-08-03 |
| 6765244 | III nitride film and a III nitride multilayer | Tomohiko Shibata, Keiichiro Asai, Mitsuhiro Tanaka | 2004-07-20 |
| 6749957 | Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element | Tomohiko Shibata, Mitsuhiro Tanaka | 2004-06-15 |