Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12406736 | Semiconductor memory device | Kazuhiko Oyama | 2025-09-02 |
| 10727235 | Secure fingerprint data generating device | — | 2020-07-28 |
| 9966141 | Nonvolatile memory cell employing hot carrier effect for data storage | — | 2018-05-08 |
| 9893208 | Nonvolatile memory device | — | 2018-02-13 |
| 9159404 | Nonvolatile memory device | — | 2015-10-13 |
| 8945293 | Silicon oxide removal apparatus and facility for recycling inert gas for use in silicon single crystal manufacturing apparatus | Takashi Higuchi | 2015-02-03 |
| 8451657 | Nonvolatile semiconductor memory device using MIS transistor | — | 2013-05-28 |
| 7821806 | Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cell | — | 2010-10-26 |
| 7791927 | Mis-transistor-based nonvolatile memory circuit with stable and enhanced performance | — | 2010-09-07 |
| 7733714 | MIS-transistor-based nonvolatile memory for multilevel data storage | Kenji Noda | 2010-06-08 |
| 7313021 | Nonvolatile memory circuit | — | 2007-12-25 |
| 7193888 | Nonvolatile memory circuit based on change in MIS transistor characteristics | — | 2007-03-20 |
| 7149104 | Storage and recovery of data based on change in MIS transistor characteristics | — | 2006-12-12 |
| 6372628 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2002-04-16 |
| 6162710 | Method for making MIS transistor | Hiroshi Ito | 2000-12-19 |
| 6147386 | Semiconductor device and method of producing the same | — | 2000-11-14 |
| 6091081 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2000-07-18 |
| 6001737 | Method of forming a semiconductor device having a titanium salicide shallow junction diffusion layer | Hiroshi Ito, Naohiko Kimizuka | 1999-12-14 |
| 5990521 | Semiconductor device and method of producing the same | — | 1999-11-23 |
| 5712204 | Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate | — | 1998-01-27 |
| 5593923 | Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal | Takashi Ishigami, Hiroyuki Nakamura, Tohru Mogami, Hitoshi Wakabayashi, Takemitsu Kunio +1 more | 1997-01-14 |
| 5571745 | Fabrication method of semiconductor device containing n- and p-channel MOSFETs | — | 1996-11-05 |
| 5543359 | Method of forming a titanium silicide film involved in a semiconductor device | — | 1996-08-06 |
| 5286664 | Method for fabricating the LDD-MOSFET | — | 1994-02-15 |
| 5043600 | BiCMOS inverter circuit | — | 1991-08-27 |