Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5945718 | Self-aligned metal-oxide-compound semiconductor device and method of fabrication | Matthias Passlack, Zhiyi Jimmy Yu | 1999-08-31 |
| 5937285 | Method of fabricating submicron FETs with low temperature group III-V material | Ravi Droopad, Corey Overgaard, Brian Bowers, Michael Philip LaMacchia, Bruce Bernhardt | 1999-08-10 |
| 5907792 | Method of forming a silicon nitride layer | Ravi Droopad, Matthias Passlack, Zhiyi Jimmy Yu | 1999-05-25 |
| 5904553 | Fabrication method for a gate quality oxide-compound semiconductor structure | Matthias Passlack, Ravi Droopad, Brian Bowers | 1999-05-18 |
| 5902130 | Thermal processing of oxide-compound semiconductor structures | Matthias Passlack, Zhiyi Jimmy Yu | 1999-05-11 |
| 5895929 | Low subthreshold leakage current HFET | Rodolfo Lucero, Bruce Bernhardt | 1999-04-20 |
| 5739557 | Refractory gate heterostructure field effect transistor | Vernon P. O'Neil, II, Majid M. Hashemi, Jenn Hwa Huang, Vijay K. Nair, Farideh Nikpourian +1 more | 1998-04-14 |
| 5693544 | N-type higfet and method | Rodolfo Lucero, Jeffrey A. Rollman | 1997-12-02 |
| 5614739 | HIGFET and method | Rodolfo Lucero, Jeffrey A. Rollman | 1997-03-25 |
| 5606184 | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making | Jenn Hwa Huang, William J. Ooms, Carl L. Shurboff, Jerald A. Hallmark | 1997-02-25 |
| 5597768 | Method of forming a Ga.sub.2 O.sub.3 dielectric layer | Matthias Passlack | 1997-01-28 |
| 5539248 | Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) | Danny L. Thompson, Zhiguo Wang | 1996-07-23 |
| 5514891 | N-type HIGFET and method | Rodolfo Lucero, Jeffrey A. Rollman | 1996-05-07 |
| 5512518 | Method of manufacture of multilayer dielectric on a III-V substrate | Jaeshin Cho, Kelly Kyler, Wayne A. Cronin, Mark Durlam | 1996-04-30 |
| 5480829 | Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts | Jenn Hwa Huang, William J. Ooms | 1996-01-02 |
| 5478437 | Selective processing using a hydrocarbon and hydrogen | Majid M. Hashemi, Stephen P. Rogers | 1995-12-26 |
| 5444016 | Method of making ohmic contacts to a complementary III-V semiconductor device | Jenn Hwa Huang, Jaeshin Cho | 1995-08-22 |
| 5243206 | Logic circuit using vertically stacked heterojunction field effect transistors | X. Theodore Zhu, Herbert Goronkin, William J. Ooms, Carl L. Shurboff | 1993-09-07 |
| 5142349 | Self-doped high performance complementary heterojunction field effect transistor | X. Theodore Zhu, Herbert Goronkin, William J. Ooms, Carl L. Shurboff | 1992-08-25 |
| 5116774 | Heterojunction method and structure | Jenn Hwa Huang | 1992-05-26 |
| 5060031 | Complementary heterojunction field effect transistor with an anisotype N+ g a -channel devices | Schyi-yi Wu, Jenn Hwa Huang | 1991-10-22 |
| 4814851 | High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor | Nicholas C. Cirillo, Jr., Michael Shur, Obert N. Tufte | 1989-03-21 |
| 4729000 | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates | — | 1988-03-01 |
| 4550031 | Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth | — | 1985-10-29 |