Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6479843 | Single supply HFET with temperature compensation | Elizabeth Glass, Olin L. Hartin, Wendy L. Valentine, Julio C. Costa | 2002-11-12 |
| 6459344 | Switch assembly and method of forming the same | Anthony M. Pavio, Wang-Chang Albert Gu | 2002-10-01 |
| 6441449 | MEMS variable capacitor with stabilized electrostatic drive and method therefor | Ji-Hai Xu, John Michael Parsey, Jr. | 2002-08-27 |
| 6384353 | Micro-electromechanical system device | Samuel L. Coffman, Xi Sun, Ji-Hai Xu, John Michael Parsey, Jr. | 2002-05-07 |
| 6362018 | Method for fabricating MEMS variable capacitor with stabilized electrostatic drive | Ji-Hai Xu, John Michael Parsey, Jr. | 2002-03-26 |
| 6309918 | Manufacturable GaAs VFET process | Benjamin W. Gable, Kurt Eisenbeiser, David Rhine | 2001-10-30 |
| 6307169 | Micro-electromechanical switch | Xi Sun, John Michael Parsey, Jr., Ji-Hai Xu | 2001-10-23 |
| 6262451 | Electrode structure for transistors, non-volatile memories and the like | Kurt Eisenbeiser, Yang Wang, Ellen Lan | 2001-07-17 |
| 6156611 | Method of fabricating vertical FET with sidewall gate electrode | Ellen Lan, Kurt Eisenbeiser, Yang Wang | 2000-12-05 |
| 6091621 | Non-volatile multistate memory cell using a ferroelectric gate fet | Yang Wang, Kurt Eisenbeiser, Ellen Lan, William J. Ooms | 2000-07-18 |
| 6057566 | Semiconductor device | Kurt Eisenbeiser, Yang Wang, Vijay K. Nair | 2000-05-02 |
| 5880029 | Method of passivating semiconductor devices and the passivated devices | Kurt Eisenbeiser | 1999-03-09 |
| 5856684 | High power HFET with improved channel interfaces | Yang Wang, Majid M. Hashemi, Kurt Eisenbeiser | 1999-01-05 |
| 5831295 | Current confinement via defect generator and hetero-interface interaction | Saied N. Tehrani | 1998-11-03 |
| 5742082 | Stable FET with shielding region in the substrate | Saied N. Tehrani, Herbert Goronkin, Ernest Schirmann, Marino J. Martinez | 1998-04-21 |
| 5739557 | Refractory gate heterostructure field effect transistor | Vernon P. O'Neil, II, Jonathan K. Abrokwah, Majid M. Hashemi, Vijay K. Nair, Farideh Nikpourian +1 more | 1998-04-14 |
| 5733827 | Method of fabricating semiconductor devices with a passivated surface | Saied N. Tehrani, Mark Durlam, Marino J. Martinez, Ernie Schirmann | 1998-03-31 |
| 5719088 | Method of fabricating semiconductor devices with a passivated surface | Mark Durlam, Marino J. Martinez, Ernie Schirmann, Saied N. Tehrani, William J. Ooms | 1998-02-17 |
| 5700703 | Method of fabricating buried control elements in semiconductor devices | Christine Thero, Kumar Shiralagi | 1997-12-23 |
| 5606184 | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making | Jonathan K. Abrokwah, William J. Ooms, Carl L. Shurboff, Jerald A. Hallmark | 1997-02-25 |
| 5480829 | Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts | Jonathan K. Abrokwah, William J. Ooms | 1996-01-02 |
| 5444016 | Method of making ohmic contacts to a complementary III-V semiconductor device | Jonathan K. Abrokwah, Jaeshin Cho | 1995-08-22 |
| 5411903 | Self-aligned complementary HFETS | Schyi-yi Wu, Faivel Pintchovski | 1995-05-02 |
| 5116774 | Heterojunction method and structure | Jonathan K. Abrokwah | 1992-05-26 |
| 5060031 | Complementary heterojunction field effect transistor with an anisotype N+ g a -channel devices | Jonathan K. Abrokwah, Schyi-yi Wu | 1991-10-22 |