TI

Toshiaki Iwamatsu

Mitsubishi Electric: 73 patents #54 of 25,717Top 1%
RE Renesas Electronics: 53 patents #6 of 4,529Top 1%
RT Renesas Technology: 50 patents #6 of 3,337Top 1%
RE Ryoden Semiconductor System Engineering: 2 patents #57 of 195Top 30%
ST S.O.I. Tec Silicon On Insulator Technologies: 2 patents #64 of 155Top 45%
MS Mitsubishi Materials Silicon: 1 patents #58 of 116Top 50%
Overall (All Time): #4,285 of 4,157,543Top 1%
179
Patents All Time

Issued Patents All Time

Showing 151–175 of 179 patents

Patent #TitleCo-InventorsDate
6144072 Semiconductor device formed on insulating layer and method of manufacturing the same Yasuo Yamaguchi, Shigenobu Maeda, Shoichi Miyamoto, Akihiko Furukawa, Yasuo Inoue 2000-11-07
6124619 Semiconductor device including upper, lower and side oxidation-resistant films Shigenobu Maeda, Shigeto Maegawa, Takashi Ipposhi, Yasuo Yamaguchi 2000-09-26
6118154 Input/output protection circuit having an SOI structure Yasuo Yamaguchi, Hirotoshi Sato, Yasuo Inoue 2000-09-12
6096583 Semiconductor device and manufacturing method thereof Takashi Ipposhi, Yasuo Inoue 2000-08-01
6051494 Semiconductor device having metal silicide film Yasuo Inoue, Yasuo Yamaguchi, Tadashi Nishimura 2000-04-18
6030873 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof Yasuo Inoue 2000-02-29
6025629 Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor Takashi Ipposhi, Yasuo Yamaguchi 2000-02-15
5937284 Method of making a semiconductor device having an SOI structure Yasuo Inoue, Tadashi Nishimura 1999-08-10
5933745 Method of making total dielectric semiconductor device isolation region Takashi Ipposhi 1999-08-03
5910672 Semiconductor device and method of manufacturing the same Takashi Ipposhi 1999-06-08
5905286 Semiconductor device Yasuo Yamaguchi, Shigenobu Maeda, Shoichi Miyamoto, Akihiko Furukawa, Yasuo Inoue 1999-05-18
5872037 Method for manufacturing a vertical mosfet including a back gate electrode Yasuo Inoue 1999-02-16
5841171 SOI Semiconductor devices Takashi Ipposhi, Yasuo Inoue 1998-11-24
5801080 Method of manufacturing semiconductor substrate having total and partial dielectric isolation Yasuo Inoue, Tadashi Nishimura, Yasuo Yamaguchi 1998-09-01
5780888 Semiconductor device with storage node Shigenobu Maeda, Yasuo Inoue, Hirotada Kuriyama, Shigeto Maegawa, Kyozo Kanamoto 1998-07-14
5736438 Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same Hisayuki Nishimura, Kazuyuki Sugahara, Shigenobu Maeda, Takashi Ipposhi, Yasuo Inoue +4 more 1998-04-07
5719426 Semiconductor device and manufacturing process thereof Takashi Ipposhi 1998-02-17
5659194 Semiconductor device having metal silicide film Yasuo Inoue, Yasuo Yamaguchi, Tadashi Nishimura 1997-08-19
5656537 Method of manufacturing a semiconductor device having SOI structure Yasuo Inoue 1997-08-12
5656842 Vertical mosfet including a back gate electrode Yasuo Inoue 1997-08-12
5652453 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof Yasuo Inoue 1997-07-29
5652454 Semiconductor device on an SOI substrate Yasuo Inoue, Yasuo Yamaguchi, Tadashi Nishimura 1997-07-29
5627390 Semiconductor device with columns Shigenobu Maeda, Yasuo Inoue, Hirotada Kuriyama, Shigeto Maegawa, Kyozo Kanamoto 1997-05-06
5619053 Semiconductor device having an SOI structure Yasuo Inoue, Tadashi Nishimura 1997-04-08
5514880 Field effect thin-film transistor for an SRAM with reduced standby current Hisayuki Nishimura, Kazuyuki Sugahara, Shigenobu Maeda, Takashi Ipposhi, Yasuo Inoue +4 more 1996-05-07