KH

Kazunari Hatade

Mitsubishi Electric: 17 patents #1,334 of 25,717Top 6%
RE Ryoden Semiconductor System Engineering: 1 patents #111 of 195Top 60%
Overall (All Time): #277,346 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
8692323 Semiconductor device with peripheral base region connected to main electrode Yoshiaki Hisamoto 2014-04-08
8421157 Semiconductor device 2013-04-16
8183631 Semiconductor device Yoshiaki Hisamoto 2012-05-22
8008746 Semiconductor device 2011-08-30
7902634 Semiconductor device 2011-03-08
7829955 Semiconductor device 2010-11-09
7777279 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Hajime Akiyama, Kazuhiro Shimizu 2010-08-17
7745906 Semiconductor device having spaced unit regions and heavily doped semiconductor layer 2010-06-29
7652350 Semiconductor device 2010-01-26
7545005 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Hajime Akiyama, Kazuhiro Shimizu 2009-06-09
7408228 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Hajime Akiyama, Kazuhiro Shimizu 2008-08-05
7190034 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Hajime Akiyama, Kazuhiro Shimizu 2007-03-13
7180106 Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance Yoshiaki Hisamoto 2007-02-20
7122875 Semiconductor device 2006-10-17
6979850 Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage 2005-12-27
6388280 Semiconductor device Kazutoyo Takano 2002-05-14
6207993 Field effect semiconductor device Youichi Ishimura, Hiroshi Yamaguchi 2001-03-27