Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8324657 | Semiconductor device | Kazuhiro Shimizu, Naoki Yasuda | 2012-12-04 |
| 8125045 | Dielectric isolation type semiconductor device and manufacturing method therefor | — | 2012-02-28 |
| 8110449 | Semiconductor device and method of manufacturing the same | — | 2012-02-07 |
| 8071454 | Method for manufacturing dielectric isolation type semiconductor device | — | 2011-12-06 |
| 7977787 | Semiconductor device | Kazuhiro Shimizu, Naoki Yasuda | 2011-07-12 |
| 7851873 | Semiconductor device and method of manufacturing the same | — | 2010-12-14 |
| 7777279 | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage | Kazunari Hatade, Kazuhiro Shimizu | 2010-08-17 |
| 7545005 | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage | Kazunari Hatade, Kazuhiro Shimizu | 2009-06-09 |
| 7485943 | Dielectric isolation type semiconductor device and manufacturing method therefor | — | 2009-02-03 |
| 7481885 | Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device | Kazuhiro Shimizu, Naoki Yasuda | 2009-01-27 |
| 7417296 | Dielectric isolation type semiconductor device | — | 2008-08-26 |
| 7408228 | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage | Kazunari Hatade, Kazuhiro Shimizu | 2008-08-05 |
| 7190034 | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage | Kazunari Hatade, Kazuhiro Shimizu | 2007-03-13 |
| 7135752 | Dielectric isolation type semiconductor device and method for manufacturing the same | Shinichi Izuo | 2006-11-14 |
| 7125780 | Dielectric isolation type semiconductor device and method for manufacturing the same | Shinichi Izuo | 2006-10-24 |
| 6992363 | Dielectric separation type semiconductor device and method of manufacturing the same | Naoki Yasuda | 2006-01-31 |
| 6603176 | Power semiconductor device for power integrated circuit device | — | 2003-08-05 |
| 6307232 | Semiconductor device having lateral high breakdown voltage element | Yoichiro Tarui | 2001-10-23 |
| 6246101 | Isolation structure and semiconductor device including the isolation structure | — | 2001-06-12 |
| 6163040 | Thyristor manufacturing method and thyristor | Kenichi Honda, Yousuke Morita, Masahito Yoshikawa, Takeshi Ohshima | 2000-12-19 |
| 6049095 | Semiconductor device | — | 2000-04-11 |
| 6037634 | Semiconductor device with first and second elements formed on first and second portions | — | 2000-03-14 |
| 5994189 | High withstand voltage semiconductor device and manufacturing method thereof | — | 1999-11-30 |
| 5804864 | High withstand voltage semiconductor device and manufacturing method thereof | — | 1998-09-08 |
| 5292672 | Method of manufacturing an insulated gate bipolar transistor | Hisao Kondoh | 1994-03-08 |