NJ

Nanseng Jeng

Micron: 51 patents #346 of 6,345Top 6%
📍 Boise, ID: #203 of 3,546 inventorsTop 6%
🗺 Idaho: #268 of 8,810 inventorsTop 4%
Overall (All Time): #51,263 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 26–50 of 52 patents

Patent #TitleCo-InventorsDate
5963820 Method for forming field oxide or other insulators during the formation of a semiconductor device 1999-10-05
5940692 Method of forming a field effect transistor Viju K. Mathews, Pierre C. Fazan 1999-08-17
5933754 Semiconductor processing method of forming an electrically conductive contact plug Viju K. Mathews, Pierre C. Fazan 1999-08-03
5902128 Process to improve the flow of oxide during field oxidation by fluorine doping Viju K. Mathews, Pierre C. Fazan 1999-05-11
5891788 Locus isolation technique using high pressure oxidation (hipox) and protective spacers Pierre C. Fazan, Viju K. Mathews 1999-04-06
5888881 Method of trench isolation during the formation of a semiconductor device Thomas A. Figura 1999-03-30
5837596 Field oxide formation by oxidation of polysilicon layer Thomas A. Figura 1998-11-17
5837378 Method of reducing stress-induced defects in silicon Viju K. Mathews, Pierre C. Fazan, Thomas A. Figura 1998-11-17
5798280 Process for doping hemispherical grain silicon Viju K. Mathews, Pierre C. Fazan 1998-08-25
5753962 Texturized polycrystalline silicon to aid field oxide formation 1998-05-19
5741624 Method for reducing photolithographic steps in a semiconductor interconnect process Christophe Pierrat 1998-04-21
5726092 Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate Viju K. Mathews, Pierre C. Fazan 1998-03-10
5719418 Contact-substrate for a semiconductor device comprising a contour Steven T. Harshfield, Paul J. Schuele 1998-02-17
5702986 Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges Viju K. Mathews, Pierre C. Fazan 1997-12-30
5674776 Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate Viju K. Mathews, Pierre C. Fazan 1997-10-07
5661072 Method for reducing oxide thinning during the formation of a semiconductor device 1997-08-26
5661073 Method for forming field oxide having uniform thickness 1997-08-26
5658829 Semiconductor processing method of forming an electrically conductive contact plug Viju K. Mathews, Pierre C. Fazan 1997-08-19
5637514 Method of forming a field effect transistor Viju K. Mathews, Pierre C. Fazan 1997-06-10
5629230 Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion Pierre C. Fazan, David Dickerson 1997-05-13
5612248 Method for forming field oxide or other insulators during the formation of a semiconductor device 1997-03-18
5580821 Semiconductor processing method of forming an electrically conductive contact plug Viju K. Mathews, Pierre C. Fazan 1996-12-03
5508215 Current leakage reduction at the storage node diffusion region of a stacked-trench dram cell by selectively oxidizing the floor of the trench 1996-04-16
5492853 Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device Steven T. Harshfield, Paul J. Schuele 1996-02-20
5472904 Thermal trench isolation Thomas A. Figura 1995-12-05