Issued Patents All Time
Showing 126–139 of 139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7479440 | Method of forming an isolation structure that includes forming a silicon layer at a base of the recess | William Budge | 2009-01-20 |
| 7439157 | Isolation trenches for memory devices | Zailong Bian, Janos Fucsko, Michael P. Violette | 2008-10-21 |
| 7273796 | Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry | Li Li, Janos Fucsko | 2007-09-25 |
| 7271464 | Liner for shallow trench isolation | Jigish Trivedi, Robert D. Patraw, Kevin L. Beaman | 2007-09-18 |
| 7271463 | Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base | William Budge | 2007-09-18 |
| 7262135 | Methods of forming layers | — | 2007-08-28 |
| 7112513 | Sub-micron space liner and densification process | Jigish Trivedi | 2006-09-26 |
| 6849510 | Non-oxidizing spacer densification method for manufacturing semiconductor devices | Brett D. Lowe, Timothy K. Carns | 2005-02-01 |
| 6642112 | Non-oxidizing spacer densification method for manufacturing semiconductor devices | Brett D. Lowe, Timothy K. Carns | 2003-11-04 |
| 6573141 | In-situ etch and pre-clean for high quality thin oxides | Bernice L. Kickel | 2003-06-03 |
| 6436195 | Method of fabricating a MOS device | John E. Berg | 2002-08-20 |
| 6190973 | Method of fabricating a high quality thin oxide | John E. Berg, Bernice L. Kickel | 2001-02-20 |
| 6165846 | Method of eliminating gate leakage in nitrogen annealed oxides | Timothy K. Carns, John A. Ransom, Bernice L. Kickel, John E. Berg | 2000-12-26 |
| 6156653 | Method of fabricating a MOS device | John E. Berg | 2000-12-05 |