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Micron: 2 patents #3,728 of 6,345Top 60%
📍 Boise, ID: #1,893 of 3,546 inventorsTop 55%
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Overall (All Time): #1,916,104 of 4,157,543Top 50%
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Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
10749041 Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Duo Mao +3 more 2020-08-18
10483407 Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Duo Mao +3 more 2019-11-19