Ee Ee Eng — 2 Patents at Micron

Ee Ee Eng has been granted 2 US patents while listed as an inventor at Micron. The first was granted in 2019 and the most recent in August 2020. Ee Ee Eng ranks #1,709,992 of 4,157,543 US inventors in our database (top 41.1%). Patent records list Ee Ee Eng in Boise, ID, US.

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Showing 1–2 of 2 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
10749041	Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man	Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Duo Mao +3 more	2020-08-18	$12,880,000
10483407	Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods	Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Duo Mao +3 more	2019-11-19	$13,655,000

Ee Ee Eng — 2 Patents

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