YS

Yasumasa Suizu

KT Kabushiki Kaisha Toshiba: 9 patents #3,402 of 21,451Top 20%
Overall (All Time): #580,878 of 4,157,543Top 15%
9
Patents All Time

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
7947610 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Yoshitaka Tsunashima, Seiji Inumiya, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka 2011-05-24
7544593 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Yoshitaka Tsunashima, Seiji Ihumiya, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka 2009-06-09
7425480 Semiconductor device and method of manufacture thereof Yoshio Ozawa, Yoshitaka Tsunashima 2008-09-16
7312138 Semiconductor device and method of manufacture thereof Yoshio Ozawa, Yoshitaka Tsunashima 2007-12-25
7306994 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Yoshitaka Tsunashima, Seiji Inumiya, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka 2007-12-11
7303946 Method of manufacturing a semiconductor device using an oxidation process Yoshio Ozawa, Yoshitaka Tsunashima 2007-12-04
6784508 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Yoshitaka Tsunashima, Seiji Inumiya, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka 2004-08-31
6759314 Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films Wakako Moriyama, Naoki Kai, Hiroaki Hazama, Keiki Nagai, Yuji Fukazawa +2 more 2004-07-06
5279973 Rapid thermal annealing for semiconductor substrate by using incoherent light 1994-01-18