Issued Patents All Time
Showing 101–124 of 124 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6664591 | Insulated gate semiconductor device | Akio Nakagawa | 2003-12-16 |
| 6620653 | Semiconductor device and method of manufacturing the same | Hidetaka Hattori, Akio Nakagawa | 2003-09-16 |
| 6617641 | High voltage semiconductor device capable of increasing a switching speed | Akio Nakagawa | 2003-09-09 |
| 6563193 | Semiconductor device | Yusuke Kawaguchi, Kazutoshi Nakamura, Hirofumi Nagano, Akio Nakagawa | 2003-05-13 |
| 6411133 | Semiconductor device | Tsutomu Kojima, Akio Nakagawa | 2002-06-25 |
| 6380566 | Semiconductor device having FET structure with high breakdown voltage | Yusuke Kawaguchi, Kazutoshi Nakamura, Hirofumi Nagano, Akio Nakagawa | 2002-04-30 |
| 6163051 | High breakdown voltage semiconductor device | Akio Nakagawa, Hideyuki Funaki, Norio Yasuhara | 2000-12-19 |
| 6064086 | Semiconductor device having lateral IGBT | Akio Nakagawa, Hideyuki Funaki, Norio Yasuhara | 2000-05-16 |
| 5994740 | Semiconductor device | Akio Nakagawa, Yoshihiro Yamaguchi | 1999-11-30 |
| 5985708 | Method of manufacturing vertical power device | Akio Nakagawa, Naoharu Sugiyama, Norio Yasuhara, Atsusi Kurobe, Hideyuki Funaki +2 more | 1999-11-16 |
| 5920087 | Lateral IGBT | Akio Nakagawa, Hideyuki Funaki | 1999-07-06 |
| 5796125 | High breakdown voltage semiconductor device using trench grooves | Mitsuhiko Kitagawa, Akio Nakagawa | 1998-08-18 |
| 5751022 | Thyristor | Norio Yasuhara, Akio Nakagawa, Hideyuki Funaki | 1998-05-12 |
| 5731603 | Lateral IGBT | Akio Nakagawa, Hideyuki Funaki | 1998-03-24 |
| 5708287 | Power semiconductor device having an active layer | Akio Nakagawa, Yoshihiro Yamaguchi | 1998-01-13 |
| 5640040 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Yoshihiro Yamaguchi, Ichiro Omura, Hideyuki Funaki | 1997-06-17 |
| 5592014 | High breakdown voltage semiconductor device | Hideyuki Funaki, Akio Nakagawa, Norio Yasuhara, Yoshihiro Yamaguchi, Ichiro Omura | 1997-01-07 |
| 5536961 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara | 1996-07-16 |
| 5463231 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara +2 more | 1995-10-31 |
| 5438220 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara, Yoshihiro Yamaguchi, Ichiro Omura, Hideyuki Funaki | 1995-08-01 |
| 5434444 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara | 1995-07-18 |
| 5428228 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara +2 more | 1995-06-27 |
| 5343067 | High breakdown voltage semiconductor device | Akio Nakagawa, Norio Yasuhara | 1994-08-30 |
| 5315134 | Thyristor with insulated gate | Tsuneo Ogura, Kiminori Watanabe, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara | 1994-05-24 |