Issued Patents All Time
Showing 25 most recent of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11665908 | Semiconductor memory device incorporating hafnium oxide insulative portions | Haruka SAKUMA, Hidenori Miyagawa, Kiwamu Sakuma, Fumitaka Arai, Kunifumi Suzuki | 2023-05-30 |
| 10916654 | Semiconductor memory device | — | 2021-02-09 |
| 10833103 | Semiconductor memory device | Haruka SAKUMA, Hidenori Miyagawa, Kiwamu Sakuma, Fumitaka Arai | 2020-11-10 |
| 10784312 | Semiconductor memory device | Shoichi Kabuyanagi, Masumi Saitoh | 2020-09-22 |
| 10249818 | Memory element | Marina Yamaguchi, Riichiro Takaishi, Yuuichi Kamimuta, Shoichi Kabuyanagi, Masumi Saitoh | 2019-04-02 |
| 10153326 | Memory device | Masato Koyama, Harumi Seki, Hidenori Miyagawa | 2018-12-11 |
| 10103328 | Nonvolatile memory device | Takayuki Ishikawa, Harumi Seki, Masumi Saitoh | 2018-10-16 |
| 10096619 | Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer | Tsunehiro Ino, Seiji Inumiya | 2018-10-09 |
| 10038032 | Semiconductor memory device, semiconductor device, and method for manufacturing the same | Kiwamu Sakuma, Masumi Saitoh, Toshiyuki Sasaki | 2018-07-31 |
| 9997569 | Memory device | Marina Yamaguchi, Yuuichi Kamimuta, Takayuki Ishikawa, Masumi Saitoh | 2018-06-12 |
| 9954167 | Memory device including a layer including hafnium oxide and method for manufacturing the same | Takayuki Ishikawa | 2018-04-24 |
| 9947685 | 3D non-volatile memory array utilizing metal ion source | Kazuhiko Yamamoto | 2018-04-17 |
| 9928908 | Resistance-change memory operating with read pulses of opposite polarity | Reika Ichihara, Daisuke Matsushita | 2018-03-27 |
| 9882127 | Nonvolatile resistance change element | Hidenori Miyagawa, Takashi Yamauchi | 2018-01-30 |
| 9865809 | Nonvolatile resistance change element | Hidenori Miyagawa, Akira Takashima | 2018-01-09 |
| 9842990 | Semiconductor memory device and method for manufacturing the same | Marina Yamaguchi, Masumi Saitoh, Hiromichi Kuriyama, Takuya Konno | 2017-12-12 |
| 9805927 | Nonvolatile semiconductor memory device | Kiwamu Sakuma, Masumi Saitoh | 2017-10-31 |
| 9779797 | Non-volatile memory device | Tsunehiro Ino | 2017-10-03 |
| 9761798 | Storage device | Yuuichi Kamimuta, Masumi Saitoh | 2017-09-12 |
| 9680094 | Memory device and method for manufacturing the same | Takashi Haimoto | 2017-06-13 |
| 9634248 | Insulator and memory device | Tsunehiro Ino, Yasushi Nakasaki, Daisuke Matsushita | 2017-04-25 |
| 9601192 | Resistance-change memory having on-state, off-state, and intermediate state | Reika Ichihara, Daisuke Matsushita | 2017-03-21 |
| 9472756 | Nonvolatile memory device | Takayuki Ishikawa, Yoshifumi Nishi | 2016-10-18 |
| 9412937 | Memory device | Masumi Saitoh, Takayuki Ishikawa, Hidenori Miyagawa, Chika Tanaka, Ichiro Mizushima | 2016-08-09 |
| 9406882 | Nonvolatile resistance change element | Hidenori Miyagawa, Reika Ichihara | 2016-08-02 |