Issued Patents All Time
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6555870 | Nonvolatile semiconductor memory device and method for producing same | — | 2003-04-29 |
| 5978265 | Non-volatile semiconductor memory device with nand type memory cell arrays | Riichiro Shirota, Ryozo Nakayama, Seiichi Aritome, Masaki Momodomi, Yasuo Itoh +1 more | 1999-11-02 |
| 5824583 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryozo Nakayama, Satoshi Inoue, Riichiro Shirota +2 more | 1998-10-20 |
| RE35838 | Electrically erasable programmable read-only memory with NAND cell structure | Masaki Momodomi, Fujio Masuoka, Riichiro Shirota, Yasuo Itoh, Kazunori Ohuchi | 1998-07-07 |
| 5768195 | Semiconductor memory device | Hiroshi Nakamura, Masaki Momodomi, Yoshihisa Iwata | 1998-06-16 |
| 5602789 | Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller | Tetsuo Endoh, Riichiro Shirota, Kazunori Ohuchi, Seiichi Aritome, Tomoharu Tanaka +1 more | 1997-02-11 |
| 5597748 | Method of manufacturing NAND type EEPROM | Masamichi Asano, Hiroshi Iwahashi, Ryozo Nakayama, Satoshi Inoue, Riichiro Shirota +2 more | 1997-01-28 |
| 5528547 | Electrically erasable programmable read-only memory with electric field decreasing controller | Seiichi Aritome, Riichiro Shirota, Yoshihisa Iwata, Masaki Momodomi | 1996-06-18 |
| 5515327 | Nonvolatile semiconductor memory device having a small number of internal boosting circuits | Naohiro Matsukawa, Riichiro Shirota | 1996-05-07 |
| 5508957 | Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through | Masaki Momodomi, Fujio Masuoka, Yasuo Itoh, Hiroshi Iwahashi, Yoshihisa Iwata +6 more | 1996-04-16 |
| 5469444 | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Tetsuo Endoh, Riichiro Shirota, Kazunori Ohuchi, Seiichi Aritome, Tomoharu Tanaka +1 more | 1995-11-21 |
| 5464998 | Non-volatile semiconductor memory NAND structure with differently doped channel stoppers | Toshiyuki Hayakawa | 1995-11-07 |
| 5440509 | Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines | Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Fujio Masuoka +3 more | 1995-08-08 |
| 5402373 | Electrically erasable programmable read-only memory with electric field decreasing controller | Seiichi Aritome, Riichiro Shirota, Yoshihisa Iwata, Masaki Momodomi | 1995-03-28 |
| 5397723 | Process for forming arrayed field effect transistors highly integrated on substrate | Riichiro Shirota, Masaki Momodomi, Ryozo Nakayama, Seiichi Aritome, Tetsuro Endoh +1 more | 1995-03-14 |
| 5392238 | Nonvolatile semiconductor memory device | — | 1995-02-21 |
| 5386422 | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Tetsuo Endoh, Riichiro Shirota, Kazunori Ohuchi, Seiichi Aritome, Tomoharu Tanaka +1 more | 1995-01-31 |
| 5323039 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryozo Nakayama, Satoshi Inoue, Riichiro Shirota +2 more | 1994-06-21 |
| 5321699 | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Tetsuo Endoh, Riichiro Shirota, Kazunori Ohuchi, Seiichi Aritome, Tomoharu Tanaka +1 more | 1994-06-14 |
| 5293337 | Electrically erasable programmable read-only memory with electric field decreasing controller | Seiichi Aritome, Riichiro Shirota, Yoshihisa Iwata, Masaki Momodomi | 1994-03-08 |
| 5179427 | Non-volatile semiconductor memory device with voltage stabilizing electrode | Ryozo Nakayama, Riichiro Shirota, Yasuo Itoh, Hideko Odaira, Masaki Momodomi +5 more | 1993-01-12 |
| 5050125 | Electrically erasable programmable read-only memory with NAND cellstructure | Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Fujio Masuoka +3 more | 1991-09-17 |
| 4959812 | Electrically erasable programmable read-only memory with NAND cell structure | Masaki Momodomi, Fujio Masuoka, Riichiro Shirota, Yasuo Itoh, Kazunori Ohuchi | 1990-09-25 |
| 4939690 | Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation | Masaki Momodomi, Riichiro Shirota, Yasuo Itoh, Satoshi Inoue, Fujio Masuoka +1 more | 1990-07-03 |