Issued Patents All Time
Showing 151–175 of 193 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6017807 | P-type GaN compound semiconductor and method for manufacturing the same | Chisato Furukawa, Hideto Sugawara, Kenji Isomoto | 2000-01-25 |
| 6015979 | Nitride-based semiconductor element and method for manufacturing the same | Lisa Sugiura, Shinya Nunoue, Masaaki Onomura, Masahiro Yamamoto | 2000-01-18 |
| 6005263 | Light emitter with lowered heterojunction interface barrier | Shinji Saito, Masaaki Onomura, Yukie Nishikawa, Peter James Parbrook | 1999-12-21 |
| 5987048 | Gallium nitride-based compound semiconductor laser and method of manufacturing the same | Masahiro Yamamoto, Shinya Nunoue, Johji Nishio, Genichi Hatakoshi, Hidetoshi Fujimoto | 1999-11-16 |
| 5981977 | Nitride compound semiconductor light emitting element and its manufacturing method | Chisato Furukawa, Hideto Sugawara, Nobuhiro Suzuki | 1999-11-09 |
| 5977565 | Semiconductor light emitting diode having a capacitor | Koichi Nitta | 1999-11-02 |
| 5966396 | Gallium nitride-based compound semiconductor laser and method of manufacturing the same | Haruhiko Okazaki, Hidetoshi Fujimoto, Shinya Nunoue, Genichi Hatakoshi, Masahiro Yamamoto | 1999-10-12 |
| 5930656 | Method of fabricating a compound semiconductor device | Chisato Furukawa, Hideto Sugawara, Kenji Isomoto | 1999-07-27 |
| 5864171 | Semiconductor optoelectric device and method of manufacturing the same | Masahiro Yamamoto, Hidetoshi Fujimoto, Yoshihiro Kokubun, Shinji Saito, Yukie Nishikawa +1 more | 1999-01-26 |
| 5821555 | Semicoductor device having a hetero interface with a lowered barrier | Shinji Saito, Masaaki Onomura, Yukie Nishikawa, Peter James Parbrook | 1998-10-13 |
| 5780873 | Semiconductor device capable of easily forming cavity and its manufacturing method | Kazuhiko Itaya, Masahiro Yamamoto, Masaaki Onomura, Hidetoshi Fujimoto, Genichi Hatakoshi +3 more | 1998-07-14 |
| 5732098 | LED display device | Katsuhiko Nisitani, Kazumi Unno, Ryo Saeki, Takafumi Nakamura, Masanobu Iwamoto | 1998-03-24 |
| 5696389 | Light-emitting semiconductor device | Hideto Sugawara, Yukie Nishikawa, Masaaki Onomura, Shinji Saito, Peter James Parbrook +5 more | 1997-12-09 |
| 5693963 | Compound semiconductor device with nitride | Hidetoshi Fujimoto, Koichi Nitta, Hideto Sugawara, Yoshihiro Kokubun, Masahiro Yamamoto | 1997-12-02 |
| 5585649 | Compound semiconductor devices and methods of making compound semiconductor devices | Yukie Nishikawa, Masaaki Onomura, Shinji Saito, Peter James Parbrook, Genichi Hatakoshi | 1996-12-17 |
| 5518323 | Method of adjusting a head gap for a wire dot impact printer | Hiroshi Sakaino, Hideaki Ishimizu, Mitsuru Kishimoto, Noboru Ooishi, Chihiro Komori +3 more | 1996-05-21 |
| 5488233 | Semiconductor light-emitting device with compound semiconductor layer | Yukie Nishikawa, Shinji Saito, Peter James Parbrook, Masaaki Onomura, Koichi Nitta +1 more | 1996-01-30 |
| 5475342 | Amplifier for stably maintaining a constant output | Makoto Nakamura, Noboru Ishihara, Yukio Akazawa | 1995-12-12 |
| 5457350 | Laminated core of rotating electric machine | Hirotaka Sakamaki, Hidetoshi Shimada, Shizunori Mitsuma, Hiroshi Zenisawa, Kiyoshi Nagashima +1 more | 1995-10-10 |
| 5310271 | Solenoid actuator | Hirokazu Andou, Hideaki Ishimizu, Mitsuru Kishimoto | 1994-05-10 |
| 5202895 | Semiconductor device having an active layer made of InGaAlP material | Koichi Nitta, Yukie Nishikawa, Hideto Sugawara, Minoru Watanabe, Masaki Okajima +1 more | 1993-04-13 |
| 5181218 | Manufacturing method of semiconductor laser with non-absorbing mirror structure | Hajime OKUDA, Hideo Shiozawa, Kazuhiko Itaya, Yukio Watanabe, Mariko Suzuki +1 more | 1993-01-19 |
| 5160447 | Compressed powder magnetic core and method for fabricating same | Tadashi Taguchi, Yasuhiko Tsuchihashi | 1992-11-03 |
| 5153889 | Semiconductor light emitting device | Hideto Sugawara, Yoshihiro Kokubun, Yukie Nishikawa, Shigeya Naritsuka, Kazuhiko Itaya +2 more | 1992-10-06 |
| 5138404 | Semiconductor device for passing current between a GaAs layer and an InGaAlP layer | Kazuhiko Itaya, Genichi Hatakoshi | 1992-08-11 |