KT

Kenichi Tokano

KT Kabushiki Kaisha Toshiba: 13 patents #2,297 of 21,451Top 15%
Overall (All Time): #385,180 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
8431992 Semiconductor device including first and second semiconductor regions with increasing impurity concentrations from a substrate surface Tetsuo Matsuda, Wataru Saito 2013-04-30
7936015 Semiconductor device having trenches filled with a semiconductor having an impurity concentration gradient Tetsuo Matsuda, Wataru Saito 2011-05-03
7898031 Semiconductor device with tapered trenches and impurity concentration gradients Tetsuo Matsuda, Wataru Saito 2011-03-01
7714385 Semiconductor device and method of fabricating the same Hiroyuki Sugaya 2010-05-11
7595530 Power semiconductor device with epitaxially-filled trenches Tetsuo Matsuda, Wataru Saito 2009-09-29
7531871 Power semiconductor switching element Ichiro Omura, Wataru Saito, Tsuneo Ogura, Hiromichi Ohashi, Yoshihiko Saito 2009-05-12
7488993 Semiconductor device and method of manufacturing the same Motoshige Kobayashi, Kazuyuki Saito 2009-02-10
7423315 Semiconductor device and method for manufacturing the same Hideki Okumura, Hitoshi Kobayashi, Masanobu Tsuchitani, Satoshi Aida, Shigeo Kouzuki +2 more 2008-09-09
7391077 Vertical type semiconductor device Atsuko Yamashita, Koichi Takahashi, Hideki Okumura, Shingo Sato 2008-06-24
7301202 Semiconductor device and method of manufacturing the same Shigeo Kouzuki, Hideki Okumura, Wataru Saito, Masaru Izumisawa, Masahiko Shiomi +4 more 2007-11-27
7075149 Semiconductor device and its manufacturing method Shingo Sato, Atsuko Yamashita, Hideki Okumura 2006-07-11
7067870 Power semiconductor switching element Ichiro Omura, Wataru Saito, Tsuneo Ogura, Hiromichi Ohashi, Yoshihiko Saito 2006-06-27
6750508 Power semiconductor switching element provided with buried electrode Ichiro Omura, Wataru Saito, Tsuneo Ogura, Hiromichi Ohashi, Yoshihiko Saito 2004-06-15