HS

Hiroyasu Sumino

KT Kabushiki Kaisha Toshiba: 16 patents #1,863 of 21,451Top 9%
Overall (All Time): #300,049 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
8597856 Direct methanol fuel cell Yoshihiro Akasaka, Masato Akita, Ryosuke Yagi, Kazuhiro Yasuda, Taishi Fukazawa 2013-12-03
7812252 Dye sensitized solar cell and method for manufacturing dye sensitized solar cell Shinji Murai, Satoshi Mikoshiba, Shuji Hayase 2010-10-12
7759277 Fuel cell catalyst, process for preparation of the same, and membrane electrode assembly and fuel cell employing the catalyst Taishi Fukazawa, Wu Mei, Yoshihiko Nakano, Tsuyoshi Kobayashi, Itsuko Mizutani 2010-07-20
7297426 Direct methanol fuel cell system, fuel cartridge, and memory for fuel cartridge Hirotaka Sakai, Nobuo Shibuya, Hiroyuki Hasebe, Norihiro Tomimatsu, Hirohisa Miyamoto +1 more 2007-11-20
7196264 Dye sensitized solar cell and method for manufacturing dye sensitized solar cell Shinji Murai, Satoshi Mikoshiba, Shuji Hayase 2007-03-27
7147950 Liquid fuel-housing tank for fuel cell and fuel cell Maki Yonetsu, Masahiro Takashita 2006-12-12
7126054 Raw material kit for electrolytic composition, electrolytic composition, and dye-sensitized solar cell Shinji Murai, Satoshi Mikoshiba, Shuji Hayase 2006-10-24
6506513 Liquid fuel-housing tank for fuel cell and fuel cell Maki Yonetsu, Masahiro Takashita 2003-01-14
6384321 Electrolyte composition, photosensitized solar cell using said electrolyte composition, and method of manufacturing photosensitized solar cell Satoshi Mikoshiba, Maki Yonetsu, Shuji Hayase 2002-05-07
6310282 Photovoltaic conversion element and a dye-sensitizing photovoltaic cell Masatoshi Sakurai, Katsuyuki Naito, Akihiro Horiguchi, Maki Yonetsu 2001-10-30
6110596 Silicon nitride ceramic circuit substrate and semiconductor device using the same Mitsuo Kasori, Akihiro Horiguchi, Fumio Ueno 2000-08-29
6107638 Silicon nitride circuit substrate and semiconductor device containing same Akihiro Horiguchi, Mitsuo Kasori, Fumio Ueno 2000-08-22
6086990 High thermal conductivity silicon nitride circuit substrate and semiconductor device using the same Akihiro Horiguchi, Mitsuo Kasori, Fumio Ueno 2000-07-11
6013356 Circuit board with high strength and high reliability and process for preparing the same Akihiro Horiguchi, Mitsuo Kasori, Fumio Ueno 2000-01-11
5641718 Sintered aluminum nitride and circuit substrate using sintered aluminum nitride Akihiro Horiguchi, Katsuyoshi Oh-Ishi, Mitsuo Kasori, Fumio Ueno, Jun Monma +1 more 1997-06-24
5616956 Circuit substrate including insulating layer of aluminum nitride and electrically conductive layer of conductive component, aluminum nitride and other components, and semiconductor device containing same Akihiro Horiguchi, Jun Monma, Kazuo Kimura, Katsuyoshi Oh-Ishi, Fumio Ueno +1 more 1997-04-01