FA

Fumitaka Arai

KT Kabushiki Kaisha Toshiba: 149 patents #34 of 21,451Top 1%
Toshiba Memory: 38 patents #7 of 1,971Top 1%
Kioxia: 13 patents #67 of 1,813Top 4%
PC Polymatech Co.: 1 patents #43 of 84Top 55%
📍 Yokkaichi, JP: #1 of 2,072 inventorsTop 1%
Overall (All Time): #3,330 of 4,157,543Top 1%
201
Patents All Time

Issued Patents All Time

Showing 176–200 of 201 patents

Patent #TitleCo-InventorsDate
7012295 Semiconductor memory with peripheral transistors having gate insulator thickness being thinner than thickness of memory and select transistors Atsuhiro Sato, Makoto Sakuma 2006-03-14
7005714 Nonvolatile semiconductor memory and manufacturing method for the same Yoshio Ozawa, Masayuki Tanaka 2006-02-28
6943402 Nonvolatile semiconductor memory device including MOS transistors each having a floating gate and control gate Shigeru Nagasaka, Akira Umezawa 2005-09-13
6940752 Nonvolatile semiconductor memory device Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Susumu Fujimura 2005-09-06
6930921 NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages Yasuhiko Matsunaga, Toshitake Yaegashi 2005-08-16
6878985 Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode Riichiro Shirota, Toshitake Yaegashi, Akira Shimizu, Yasuhiko Matsunaga, Masayuki Ichige +1 more 2005-04-12
6868010 Semiconductor memory device having row decoder in which high-voltage-applied portion is located adjacent to low-voltage-applied portion Akira Shimizu, Riichiro Shirota 2005-03-15
6859394 NAND type non-volatile semiconductor memory device Yasuhiko Matsunaga, Toshitake Yaegashi, Riichiro Shirota 2005-02-22
6859395 NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages Yasuhiko Matsunaga, Toshitake Yaegashi 2005-02-22
6816411 Non-volatile semiconductor storage device composed of NAND type EEPROM and deletion verification method in non-volatile semiconductor storage device Toshitake Yaegashi, Yasuhiko Matsunaga 2004-11-09
6807104 Nonvolatile semiconductor memory device and data program method thereof Akira Shimizu 2004-10-19
6798698 Nonvolatile semiconductor memory device Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Susumu Fujimura 2004-09-28
6784503 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration Kazuhiro Shimizu 2004-08-31
6680230 Semiconductor device and method of fabricating the same Norihisa Arai, Seiichi Aritome, Akira Shimizu, Riichiro Shirota 2004-01-20
6596578 Semiconductor device and manufacturing method thereof Yuji Takeuchi 2003-07-22
6549464 Nonvolatile semiconductor memory device Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Susumu Fujimura 2003-04-15
6531357 Method of manufacturing a semiconductor device Yuji Takeuchi 2003-03-11
6493265 Nonvolatile semiconductor memory device Shinji Satoh, Riichiro Shirota 2002-12-10
6459612 Nonvolatile semiconductor memory device Shinji Satoh, Riichiro Shirota 2002-10-01
6434055 Nonvolatile semiconductor memory device Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Susumu Fujimura 2002-08-13
6413809 Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench Takuya Nakamura, Naoki Koido, Hirohisa Iizuka, Kazuhito Narita, Seiichi Aritome 2002-07-02
6388341 Semiconductor device Yuji Takeuchi 2002-05-14
6314026 Nonvolatile semiconductor device using local self boost technique Shinji Satoh, Riichiro Shirota 2001-11-06
6222225 Semiconductor device and manufacturing method thereof Takuya Nakamura, Naoki Koido, Hirohisa Iizuka, Kazuhito Narita, Seiichi Aritome 2001-04-24
6208560 Nonvolatile semiconductor memory device Tomoharu Tanaka, Hiroshi Nakamura, Ken Takeuchi, Riichiro Shirota, Susumu Fujimura 2001-03-27