| 4994868 |
Heterojunction confined channel FET |
Arthur E. Geissberger, Robert A. Sadler, Gregory E. Menk |
1991-02-19 |
| 4965218 |
Self-aligned gate realignment employing planarizing overetch |
Arthur E. Geissberger, Robert A. Sadler, Paulette Luper |
1990-10-23 |
| 4962050 |
GaAs FET manufacturing process employing channel confining layers |
Arthur E. Geissberger, Robert A. Sadler, Gregory E. Menk |
1990-10-09 |
| 4948752 |
Method of making sagfets on buffer layers |
Arthur E. Geissberger, Robert A. Sadler, Gregory E. Menk |
1990-08-14 |
| 4918493 |
Sagfet with buffer layers |
Arthur E. Geissberger, Robert A. Sadler, Gregory E. Menk |
1990-04-17 |
| 4849376 |
Self-aligned refractory gate process with self-limiting undercut of an implant mask |
Arthur E. Geissberger, Robert A. Sadler |
1989-07-18 |
| 4847212 |
Self-aligned gate FET process using undercut etch mask |
Arthur E. Geissberger, Robert A. Sadler |
1989-07-11 |
| 4782032 |
Method of making self-aligned GaAs devices having TiWN.sub.x gate/interconnect |
Arthur E. Geissberger, Robert A. Sadler |
1988-11-01 |