GS

Gheorghe Samachisa

ST Sandisk Technologies: 20 patents #51 of 394Top 15%
SU Sundisk: 5 patents #5 of 19Top 30%
SI Seeq Technology, Incorporated: 1 patents #19 of 27Top 75%
📍 San Jose, CA: #2,401 of 32,062 inventorsTop 8%
🗺 California: #20,738 of 386,348 inventorsTop 6%
Overall (All Time): #156,226 of 4,157,543Top 4%
26
Patents All Time

Issued Patents All Time

Showing 1–25 of 26 patents

Patent #TitleCo-InventorsDate
7449746 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2008-11-11
7071060 EEPROM with split gate source side infection with sidewall spacers Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2006-07-04
6954381 EEPROM with split gate source side injection with sidewall spacers Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2005-10-11
6861700 Eeprom with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2005-03-01
6704222 Multi-state operation of dual floating gate array Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2004-03-09
6664587 EEPROM cell array structure with specific floating gate shape Daniel C. Guterman, Yupin Fong, Eliyahou Harari 2003-12-16
6002152 EEPROM with split gate source side injection with sidewall spacers Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1999-12-14
5965913 Dense vertical programmable read only memory cell structures and processes for making them Jack Yuan, Daniel C. Guterman, Eliyahou Harari 1999-10-12
5910915 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1999-06-08
5910925 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1999-06-08
5883409 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1999-03-16
5847996 Eeprom with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1998-12-08
5847425 Dense vertical programmable read only memory cell structures and processes for making them Jack Yuan, Daniel C. Guterman, Eliyahou Harari 1998-12-08
5776810 Method for forming EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harari 1998-07-07
5756385 Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers Jack Yuan, Eliyahou Harari, Henry Chien 1998-05-26
5747359 Method of patterning polysilicon layers on substrate Jack Yuan, Eliyahou Harari, Henry Chien 1998-05-05
5712180 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong 1998-01-27
5654217 Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers Jack Yuan, Eliyahou Harari, Henry Chien 1997-08-05
5595924 Technique of forming over an irregular surface a polysilicon layer with a smooth surface Jack Yuan 1997-01-21
5534456 Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers Jack Yuan, Eliyahou Harari, Henry Chien 1996-07-09
5512505 Method of making dense vertical programmable read only memory cell structure Jack Yuan, Daniel C. Guterman, Eliyahou Harari 1996-04-30
5380672 Dense vertical programmable read only memory cell structures and processes for making them Jack Yuan, Daniel C. Guterman, Eliyahou Harari 1995-01-10
5343063 Dense vertical programmable read only memory cell structure and processes for making them Jack Yuan, Daniel C. Guterman, Eliyahou Harari 1994-08-30
5313421 EEPROM with split gate source side injection Daniel C. Guterman, Yupin Fong, Eliyahou Harrai 1994-05-17
5272669 Method and structure for programming floating gate memory cells Yupin Fong 1993-12-21