Issued Patents All Time
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12354668 | Programming method for semiconductor device and semiconductor device | Kaiwei Li, Jianquan Jia, Yuanyuan Min, Ying Cui, Hongtao Liu +2 more | 2025-07-08 |
| 12262539 | 3D NAND memory device and method of forming the same | Li Xiao, Ming-Yih Wang | 2025-03-25 |
| 12260096 | Method of reducing Vpass disturb in 3D nand systems | Jie Yuan, Ying Cui, Yuanyuan Min, Hongtao Liu | 2025-03-25 |
| 12237025 | Memory device, memory system, and program operation method thereof | Xiangnan Zhao, Ying Cui | 2025-02-25 |
| 12176043 | Three-dimensional memory device programming with reduced disturbance | Xiangnan Zhao, Yuanyuan Min, Jianquan Jia, Kaikai You | 2024-12-24 |
| 12165716 | Method of performing programming operation and related memory device | Xinlei Jia, Shan Li, Lei Jin, Hongtao Liu, Jianquan Jia +2 more | 2024-12-10 |
| 11875862 | Memory including a plurality of portions and used for reducing program disturbance and program method thereof | Xiangnan Zhao, Ying Cui | 2024-01-16 |
| 11864379 | Three-dimensional memory and control method thereof | Xuezhun Xie, Lei Jin, Xiangnan Zhao, Yuanyuan Min, Jianquan Jia | 2024-01-02 |
| 11848058 | Method and memory used for reducing program disturbance by adjusting voltage of dummy word line | Jianquan Jia, Kaikai You, An Zhang, Xiangnan Zhao, Ying Cui +6 more | 2023-12-19 |
| 11825656 | 3D NAND memory device and method of forming the same | Li Xiao, Ming-Yih Wang | 2023-11-21 |
| 11721403 | Method of programming and verifying memory device and related memory device | Xiangnan Zhao, An Zhang, Hongtao Liu, Lei Jin | 2023-08-08 |
| 11710529 | Three-dimensional memory device programming with reduced disturbance | Xiangnan Zhao, Yuanyuan Min, Jianquan Jia, Kaikai You | 2023-07-25 |
| 11670373 | Three-dimensional memory device programming with reduced threshold voltage shift | Xiangnan Zhao, Yuanyuan Min, Kaikai You | 2023-06-06 |
| 11626170 | Method and memory used for reducing program disturbance by adjusting voltage of dummy word line | Jianquan Jia, Kaikai You, An Zhang, Xiangnan Zhao, Ying Cui +6 more | 2023-04-11 |
| 11594288 | Memory including a plurality of portions and used for reducing program disturbance and program method thereof | Xiangnan Zhao, Ying Cui | 2023-02-28 |
| 11568941 | Memory including a plurality of portions and used for reducing program disturbance and program method thereof | Xiangnan Zhao, Ying Cui | 2023-01-31 |
| 11430811 | 3D NAND memory device with select gate cut | Li Xiao, Ming-Yih Wang | 2022-08-30 |
| 11423995 | Three-dimensional memory device programming with reduced disturbance | Xiangnan Zhao, Yuanyuan Min, Jianquan Jia, Kaikai You | 2022-08-23 |
| 11404441 | 3D NAND memory device and method of forming the same | Li Xiao, Ming-Yih Wang | 2022-08-02 |
| 11398284 | Method of performing programming operation and related memory device | Xinlei Jia, Shan Li, Lei Jin, Hongtao Liu, Jianquan Jia +2 more | 2022-07-26 |
| 11276467 | Method of programming memory device and related memory device having a channel-stacked structure | Hongtao Liu, Lei Jin, Shan Li | 2022-03-15 |
| 11257545 | Method of programming memory device and related memory device | Wenzhe Wei, Hongtao Liu, Kaikai You, Da Li, Ying Huang +1 more | 2022-02-22 |
| 11205494 | Non-volatile memory device and control method | Jianquan Jia, Kaikai You, Ying Cui, Kaiwei Li, Shan Li +1 more | 2021-12-21 |
| 11195590 | Memory including a plurality of portions and used for reducing program disturbance and program method thereof | Xiangnan Zhao, Ying Cui | 2021-12-07 |
| 11062782 | Three-dimensional memory device programming with reduced disturbance | Ming-Yih Wang, Hong Liu | 2021-07-13 |