WE

Willem G. Einthoven

GI General Instrument: 11 patents #31 of 950Top 4%
GS General Semiconductor: 5 patents #6 of 38Top 20%
GD General Instrument Corporation Of Delaware: 1 patents #19 of 67Top 30%
📍 Montgomery, NJ: #60 of 505 inventorsTop 15%
🗺 New Jersey: #4,597 of 69,400 inventorsTop 7%
Overall (All Time): #259,840 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
6858510 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same Anthony Gerard Ginty, Aidan Walsh 2005-02-22
6602769 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same Lawrence LaTerza, Gary Horsman, Jack Eng, Danny Garbis 2003-08-05
6600204 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same Anthony Gerard Ginty, Aidan Walsh 2003-07-29
6489660 Low-voltage punch-through bi-directional transient-voltage suppression devices Lawrence LaTerza, Gary Horsman, Jack Eng, Danny Garbis 2002-12-03
5882986 Semiconductor chips having a mesa structure provided by sawing Jack Eng, Joseph Chan, John Amato, Sandy Tan, Lawrence LaTerza +2 more 1999-03-16
5773874 Semiconductor device having a mesa structure for surface voltage breakdown 1998-06-30
5640043 High voltage silicon diode with optimum placement of silicon-germanium layers Jack Eng, Joseph Chan, Lawrence LaTerza, Gregory Zakaluk, Jun Wu +2 more 1997-06-17
5635414 Low cost method of fabricating shallow junction, Schottky semiconductor devices Gregory Zakaluk, Dennis Garbis, Joseph Chan, Jack Eng, Jun Wu +1 more 1997-06-03
5371647 Surge protection circuit module and method for assembling same Robert L. Fried, Lou Schilling, Muni M. Mitchell 1994-12-06
5166769 Passitvated mesa semiconductor and method for making same Linda J. Down 1992-11-24
5010023 Method for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristics Muni M. Mitchell 1991-04-23
4980315 Method of making a passivated P-N junction in mesa semiconductor structure Linda J. Down 1990-12-25
4929987 Method for setting the threshold voltage of a power mosfet 1990-05-29
4891685 Rectifying P-N junction having improved breakdown voltage characteristics and method for fabricating same Muni M. Mitchell 1990-01-02
4859621 Method for setting the threshold voltage of a vertical power MOSFET 1989-08-22
4742377 Schottky barrier device with doped composite guard ring 1988-05-03
4740477 Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics Muni M. Mitchell 1988-04-26
4638551 Schottky barrier device and method of manufacture 1987-01-27