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Structural body and method for manufacturing semiconductor substrate |
Hyun Jae Lee, Katsushi Fujii |
2014-11-04 |
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Group III nitride semiconductor and a manufacturing method thereof |
Meoung Whan Cho, Ryuichi Toba |
2012-07-10 |
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Meoung Whan Cho |
2012-02-28 |
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Semiconductor substrate fabrication by etching of a peeling layer |
Meoung Whan Cho |
2012-02-21 |
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Device manufacturing method |
Meoung Whan Cho |
2011-03-15 |
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Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate |
Hiroyuki Kato, Michihiro Sano, Katsumi Maeda, Hiroshi Yoneyama, Meoung Whan Cho |
2010-11-09 |
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Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element |
Meoung Whan Cho |
2010-11-09 |
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ZnO group epitaxial semiconductor device and its manufacture |
Hiroyuki Kato, Kazuhiro Miyamoto, Michihiro Sano |
2009-01-27 |
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Process for producing GaN substrate |
Takuma Suzuki, Hang-ju Ko, Agus Setiawan |
2009-01-20 |
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Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate |
Hiroyuki Kato, Michihiro Sano, Katsumi Maeda, Hiroshi Yoneyama, Meoung Whan Cho |
2008-10-21 |
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P-type single crystal zinc-oxide having low resistivity and method for preparation thereof |
Tetsuya Yamamoto, Hiroshi Yoshida |
2005-05-24 |
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Semiconductor light-emitting element having first and second epitaxial layer group II-VI semiconductor compounds on a substrate |
Hiromitsu Uchiyama, Takaharu Iwadachi |
2004-08-17 |
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ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
Michihiro Sano |
2003-12-16 |
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P-type contact electrode device and light-emitting device |
Meoung Whan Cho |
2003-12-16 |
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p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals |
Michihiro Sano |
2002-06-18 |