Issued Patents All Time
Showing 25 most recent of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431333 | Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell | Indranil De, Jeremy Cheng, Thomas Sokollik, Yoram Schwarz, Xumin Shen | 2025-09-30 |
| 12020897 | Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell | Indranil De, Jeremy Cheng, Thomas Sokollik, Yoram Schwarz, Xumin Shen | 2024-06-25 |
| 11605526 | Systems, devices, and methods for aligning a particle beam and performing a non-contact electrical measurement on a cell and/or non-contact electrical measurement cell vehicle using a registration cell | Indranil De, Jeremy Cheng, Thomas Sokollik, Yoram Schwarz, Xumin Shen | 2023-03-14 |
| 11328899 | Methods for aligning a particle beam and performing a non-contact electrical measurement on a cell using a registration cell | Indranil De, Jeremy Cheng, Thomas Sokollik, Yoram Schwarz, Xumin Shen | 2022-05-10 |
| 11107804 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-31 |
| 11081476 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-03 |
| 11081477 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-03 |
| 11075194 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-07-27 |
| 11018126 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-05-25 |
| 10978438 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-04-13 |
| 10854522 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-12-01 |
| 10777472 | IC with test structures embedded within a contiguous standard cell area | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-09-15 |
| 10600961 | Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance | Wei Yi, Kenneth K. Tsang, Xiwei Bai, Jack A. Crowell, Elias A. Flores | 2020-03-24 |
| 10593604 | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-03-17 |
| 10290552 | Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-05-14 |
| 10269786 | Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-04-23 |
| 10211111 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-19 |
| 10211112 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-19 |
| 10199294 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199293 | Method for processing a semiconductor water using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side to side short, and chamfer short test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199290 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199289 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199288 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199287 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199286 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas | Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |