SS

Srikant Sridevan

IR International Rectifier: 13 patents #38 of 432Top 9%
SV Siliconix Technology C. V.: 3 patents #5 of 21Top 25%
NU North Carolina State University: 1 patents #675 of 1,607Top 45%
📍 Redondo Beach, CA: #63 of 1,594 inventorsTop 4%
🗺 California: #32,725 of 386,348 inventorsTop 9%
Overall (All Time): #257,091 of 4,157,543Top 7%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
9478441 Method for forming a superjunction device with improved ruggedness 2016-10-25
8368120 Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Alexander Lidow, Daniel M. Kinzer 2013-02-05
8017978 Hybrid semiconductor device Alexander Lidow, Daniel M. Kinzer 2011-09-13
RE41509 High voltage vertical conduction superjunction semiconductor device Daniel M. Kinzer 2010-08-17
7767500 Superjunction device with improved ruggedness 2010-08-03
7659588 Termination for a superjunction device Ali Husain 2010-02-09
7166890 Superjunction device with improved ruggedness 2007-01-23
6900537 High power silicon carbide and silicon semiconductor device package 2005-05-31
6835993 Bidirectional shallow trench superjunction device with resurf region Daniel M. Kinzer 2004-12-28
6812525 Trench fill process Igor Bul 2004-11-02
6787872 Lateral conduction superjunction semiconductor device Daniel M. Kinzer 2004-09-07
6727128 Method of preparing polysilicon FET built on silicon carbide diode substrate 2004-04-27
6608350 High voltage vertical conduction superjunction semiconductor device Daniel M. Kinzer 2003-08-19
6552363 Polysilicon FET built on silicon carbide diode substrate 2003-04-22
6512267 Superjunction device with self compensated trench walls Daniel M. Kinzer 2003-01-28
6509240 Angle implant process for cellular deep trench sidewall doping Liping Ren 2003-01-21
6194741 MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance Daniel M. Kinzer 2001-02-27
5742076 Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance Peter Kerr McLarty, Bantval J. Baliga 1998-04-21