Issued Patents All Time
Showing 25 most recent of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11107804 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-08-31 |
| 11081476 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-08-03 |
| 11081477 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-08-03 |
| 11075194 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-07-27 |
| 11018126 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-05-25 |
| 10978438 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +21 more | 2021-04-13 |
| 10854522 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2020-12-01 |
| 10777472 | IC with test structures embedded within a contiguous standard cell area | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2020-09-15 |
| 10593604 | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2020-03-17 |
| 10546792 | Method for manufacturing a semiconductor product wafer | Yih-Yuh Doong | 2020-01-28 |
| 10410735 | Direct access memory characterization vehicle | Yih-Yuh Doong, Chao-Hsiung Lin, Shihpin Kuo, Tzupin Shen, Chia-Chi Lin +1 more | 2019-09-10 |
| 10380305 | Direct probing characterization vehicle for transistor, capacitor and resistor testing | Yih-Yuh Doong, Chia-Chi Lin, Hans Eisenmann, Cho-Si Huang, Tzupin Shen +2 more | 2019-08-13 |
| 10290552 | Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-05-14 |
| 10269786 | Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-04-23 |
| 10211112 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-19 |
| 10211111 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-19 |
| 10199287 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199286 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199285 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakages, and at least one via respective tip-to-tip short, side-to-side short, and via open test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199284 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199283 | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199294 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199293 | Method for processing a semiconductor water using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side to side short, and chamfer short test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199290 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |
| 10199289 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas | Stephen Lam, Dennis Ciplickas, Tomasz Brozek, Jeremy Cheng, Simone Comensoli +20 more | 2019-02-05 |