| 5123048 |
Speech processing apparatus |
Koichi MIYAMAE |
1992-06-16 |
| 5067160 |
Motion-pattern recognition apparatus |
Hiroshi Shimizu, Yoko Yamaguchi |
1991-11-19 |
| 4982170 |
Signal processing apparatus |
Masanori Sakuranaga, Hiroshi Shimizu, Yoko Yamaguchi |
1991-01-01 |
| 4982251 |
Semiconductor element |
Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Takashi Nakagiri |
1991-01-01 |
| 4921722 |
Method for forming deposited film |
Yoshiyuki Osada, Hisanori Tsuda, Masafumi Sano, Katsuji Takasu, Yutaka Hirai |
1990-05-01 |
| 4905072 |
Semiconductor element |
Toshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Yoshiyuki Osada, Takashi Nakagiri |
1990-02-27 |
| 4884079 |
Image forming apparatus and driving method therefor |
Hiroshi Inoue, Yoshiyuki Osada, Yutaka Inoue, Tadashi Yamakawa, Hiroshi Satomura |
1989-11-28 |
| 4881066 |
Active matrix-type display panel |
Hideo Kanno, Shinichi Yamashita, Masahiko Enari, Mitsutoshi Kuno, Yoshiyuki Osada |
1989-11-14 |
| 4816819 |
Display panel |
Masahiko Enari, Shinichi Yamashita, Mitsutoshi Kuno, Hiroshi Inoue, Yoshiyuki Osada |
1989-03-28 |
| 4814842 |
Thin film transistor utilizing hydrogenated polycrystalline silicon |
Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Takashi Nakagiri |
1989-03-21 |
| 4766477 |
Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency |
Katsumi Nakagawa, Toshiyuki Komatsu, Yoshiyuki Osada, Yutaka Hirai, Takashi Nakagiri |
1988-08-23 |
| 4719501 |
Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers |
Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Yoshiyuki Osada, Takashi Nakagiri |
1988-01-12 |
| 4675667 |
Method for driving liquid-crystal panel |
Takashi Nakamura, Katsunori Hatanaka, Yoshiyuki Osada |
1987-06-23 |
| 4645684 |
Method for forming deposited film |
Yoshiyuki Osada, Hisanori Tsuda, Masafumi Sano, Katsuji Takasu, Yutaka Hirai |
1987-02-24 |
| 4625224 |
Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine |
Katsumi Nakagawa, Toshiyuki Komatsu, Yoshiyuki Osada, Yutaka Hirai, Takashi Nakagiri |
1986-11-25 |
