| RE44156 |
Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage |
Ching-Chun Huang, Jy-Hwang Lin |
2013-04-16 |
| 7005339 |
Method of integrating high voltage metal oxide semiconductor devices and submicron metal oxide semiconductor devices |
Ching-Chun Huang, Ming-Hsien Huang, Jy-Hwang Lin |
2006-02-28 |
| 6900097 |
Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage |
Ching-Chun Huang, Jy-Hwang Lin |
2005-05-31 |
| 6335260 |
Method for improving the dimple phenomena of a polysilicon film deposited on a trench |
Mao-Song Tseng, Chin-Lin Lin, Su-Wen Chang |
2002-01-01 |
| 6184092 |
Self-aligned contact for trench DMOS transistors |
Mao-Song Tseng, Su-Wen Chang, Chin-Lin Lin |
2001-02-06 |