Issued Patents All Time
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11710785 | RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages | Austin Hickman, Samuel James BADER, Huili Grace Xing, Debdeep Jena | 2023-07-25 |
| 11522080 | High-voltage p-channel FET based on III-nitride heterostructures | Samuel James BADER, Huili Grace Xing, Debdeep Jena | 2022-12-06 |
| 11158709 | Polarization-induced 2D hole gases for high-voltage p-channel transistors | Samuel James BADER, Jena Debdeep, Huili Grace Xing | 2021-10-26 |