Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11817478 | Termination structures with reduced dynamic output capacitance loss | Jaume Roig-Guitart, Fredrik Allerstam, Thomas Neyer, Andrei Konstantinov, Jangkwon Lim | 2023-11-14 |
| 10749002 | Short-circuit performance for silicon carbide semiconductor device | — | 2020-08-18 |
| 10504995 | Short-circuit performance for silicon carbide semiconductor device | — | 2019-12-10 |
| 10453950 | Silicon carbide (SiC) device with improved gate dielectric shielding | — | 2019-10-22 |
| 9685550 | Silicon carbide (SiC) device with improved gate dielectric shielding | — | 2017-06-20 |
| 9590047 | SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer | — | 2017-03-07 |
| 9478629 | Conductivity modulation in a silicon carbide bipolar junction transistor | Benedetto Buono | 2016-10-25 |
| 8907351 | Bipolar junction transistor in silicon carbide with improved breakdown voltage | — | 2014-12-09 |
| 8853827 | Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact | — | 2014-10-07 |
| 8829533 | Silicon carbide semiconductor device | — | 2014-09-09 |
| 8378390 | Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contact | — | 2013-02-19 |