Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9219001 | Methods of forming semiconductor devices having recesses | Aaron R. Wilson, David K. Hwang | 2015-12-22 |
| 9041086 | Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells | David K. Hwang | 2015-05-26 |
| 8497530 | Semiconductor structures including dual fins | Aaron R. Wilson, David K. Hwang | 2013-07-30 |
| 8211763 | Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells | David K. Hwang | 2012-07-03 |
| 8178911 | Semiconductor device having reduced sub-threshold leakage | David K. Hwang | 2012-05-15 |
| 8138526 | Semiconductor structures including dual fins | Aaron R. Wilson, David K. Hwang | 2012-03-20 |
| 8022473 | Semiconductor device having reduced sub-threshold leakage | David K. Hwang | 2011-09-20 |
| 7948030 | Semiconductor constructions of memory devices with different sizes of GateLine trenches | Aaron R. Wilson, David K. Hwang | 2011-05-24 |
| 7910971 | Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cells | David K. Hwang | 2011-03-22 |
| 7897465 | Semiconductor device having reduced sub-threshold leakage | David K. Hwang | 2011-03-01 |
| 7879659 | Methods of fabricating semiconductor devices including dual fin structures | Aaron R. Wilson, David K. Hwang | 2011-02-01 |
| 7808041 | Semiconductor constructions of memory device with different depth gate line trenches | Aaron R. Wilson, David K. Hwang | 2010-10-05 |
| 7696568 | Semiconductor device having reduced sub-threshold leakage | David K. Hwang | 2010-04-13 |
| 7648915 | Methods of forming semiconductor constructions, and methods of recessing materials within openings | Aaron R. Wilson, David K. Hwang | 2010-01-19 |