KS

Kouhei Sugihara

RE Renesas Electronics: 9 patents #397 of 4,529Top 9%
RT Renesas Technology: 5 patents #592 of 3,337Top 20%
Overall (All Time): #329,951 of 4,157,543Top 8%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
12198987 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2025-01-14
9847417 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2017-12-19
9614081 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2017-04-04
9412867 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2016-08-09
9209191 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2015-12-08
8809186 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2014-08-19
8586475 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2013-11-19
8372747 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2013-02-12
7960281 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2011-06-14
7470618 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2008-12-30
7183204 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2007-02-27
6906393 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2005-06-14
6872642 Manufacturing method of semiconductor device Hidekazu Oda, Hirokazu Sayama, Kazunobu Ohta 2005-03-29
6835610 Method of manufacturing semiconductor device having gate electrode with expanded upper portion Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda 2004-12-28