| 6303491 |
Method for fabricating self-aligned contact hole |
Tzu-Ching Tsai, Lin-Chin Su, Tse-Yao Huang |
2001-10-16 |
| 6215546 |
Method of optical correction for improving the pattern shrinkage caused by scattering of the light |
Ronfu Chu, Quentin Chen, Chungwei Hsu |
2001-04-10 |
| 6107175 |
Method of fabricating self-aligned contact |
Han-Chung Lin, Sun-Chieh Chien |
2000-08-22 |
| 5966604 |
Method of manufacturing MOS components having lightly doped drain structures |
Han-Chung Lin, Sun-Chieh Chien |
1999-10-12 |
| 5679602 |
Method of forming MOSFET devices with heavily doped local channel stops |
Sun-Chieh Chien |
1997-10-21 |
| 5663586 |
Fet device with double spacer |
— |
1997-09-02 |
| 5652160 |
Method of fabricating a buried contact structure with WSi.sub.x sidewall spacers |
Sun-Chieh Chien |
1997-07-29 |
| 5641698 |
Method of fabricating FET device with double spacer |
— |
1997-06-24 |
| 5612239 |
Use of oxide spacers formed by liquid phase deposition |
Sun-Chieh Chien |
1997-03-18 |
| 5550079 |
Method for fabricating silicide shunt of dual-gate CMOS device |
— |
1996-08-27 |
| 5550074 |
Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask |
— |
1996-08-27 |
| 5547900 |
Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process |
— |
1996-08-20 |
| 5510279 |
Method of fabricating an asymmetric lightly doped drain transistor device |
Sun-Chieh Chien, Chen-Chiu Hsue |
1996-04-23 |
| 5504038 |
Method for selective tungsten sidewall and bottom contact formation |
Sun-Chieh Chien |
1996-04-02 |
| 5502009 |
Method for fabricating gate oxide layers of different thicknesses |
— |
1996-03-26 |