HY

Hideki Yasuoka

RT Renesas Technology: 11 patents #212 of 3,337Top 7%
HI Hitachi: 6 patents #6,582 of 28,497Top 25%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
HC Hitachi Device Engineering Co.: 1 patents #292 of 514Top 60%
Overall (All Time): #210,375 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8860169 Semiconductor device comprising a Schottky barrier diode Kunihiko Kato, Masatoshi Taya, Masami Koketsu 2014-10-14
8604583 Semiconductor device comprising a Schottky barrier diode Kunihiko Kato, Masatoshi Taya, Masami Koketsu 2013-12-10
8324706 Semiconductor device and a method of manufacturing the same Keiichi Yoshizumi, Kazuhisa Higuchi, Takayuki Nakaji, Masami Koketsu 2012-12-04
8169047 Semiconductor device comprising a schottky barrier diode Kunihiko Kato, Masatoshi Taya, Masami Koketsu 2012-05-01
7790554 Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETs Masami Kouketsu, Susumu Ishida, Kazunari Saitou 2010-09-07
7759763 Semiconductor device and a method of manufacturing the same Keiichi Yoshizumi, Kazuhisa Higuchi, Takayuki Nakaji, Masami Koketsu 2010-07-20
7592669 Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel Keiichi Yoshizumi, Masami Koketsu 2009-09-22
7541661 Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs Masami Kouketsu, Susumu Ishida, Kazunari Saitou 2009-06-02
7514749 Semiconductor device and a method of manufacturing the same Kunihiko Kato, Masami Koketsu, Shigeya Toyokawa, Keiichi Yoshizumi, Yasuhiro Takeda 2009-04-07
7393737 Semiconductor device and a method of manufacturing the same Keiichi Yoshizumi, Kazuhisa Higuchi, Takayuki Nakaji, Masami Koketsu 2008-07-01
7391083 Semiconductor device and a method of manufacturing the same Kunihiko Kato, Masami Koketsu, Shigeya Toyokawa, Keiichi Yoshizumi, Yasuhiro Takeda 2008-06-24
7259054 Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistor Keiichi Yoshizumi, Masami Koketsu 2007-08-21
7224037 Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs Masami Kouketsu, Susumu Ishida, Kazunari Saitou 2007-05-29
7064090 Method of manufacturing a semiconductor integrated circuit device Shinichi Minami, Yoshiaki Kamigaki, Fukuo Owada 2006-06-20
6803644 Semiconductor integrated circuit device and method of manufacturing the same Shinichi Minami, Yoshiaki Kamigaki, Fukuo Owada 2004-10-12
6780717 Semiconductor integrated circuit device and method of manufacturing the same Masami Kouketsu, Susumu Ishida, Kazunari Saitou 2004-08-24
5256893 Semiconductor integrated circuit device with power MOSFET incorporated 1993-10-26
5017996 Semiconductor device and production method thereof 1991-05-21
4662057 Method of manufacturing a semiconductor integrated circuit device Yasunobu Tanizaki, Akira Muramatsu, Norio Anzai 1987-05-05
4616405 Semiconductor device and manufacturing method thereof 1986-10-14
4529456 Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer Norio Anzai 1985-07-16