GB

Guilhem Bouton

SS Stmicroelectronics (Rousset) Sas: 20 patents #18 of 397Top 5%
SS Stmicroelectronics Sa: 1 patents #2,729 of 4,662Top 60%
Overall (All Time): #204,739 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12087683 Low-dispersion component in an electronic chip François Tailliet 2024-09-10
11244893 Low-dispersion component in an electronic chip François Tailliet 2022-02-08
10861802 Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit Christian Rivero, Pascal Fornara, Mathieu Lisart 2020-12-08
10770547 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses Pascal Fornara, Christian Rivero 2020-09-08
10714583 MOS transistor with reduced hump effect Christian Rivero, Pascal Fornara, Julien Delalleau 2020-07-14
10490632 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses Pascal Fornara, Christian Rivero 2019-11-26
10418322 Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto Patrick Regnier 2019-09-17
10211291 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses Pascal Fornara, Christian Rivero 2019-02-19
10177101 Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit Christian Rivero, Pascal Fornara, Mathieu Lisart 2019-01-08
10115666 Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto Patrick Regnier 2018-10-30
10049991 Method for forming at least one electrical discontinuity in an interconnection part of an integrated circuit, and corresponding integrated circuit Christian Rivero, Pascal Fornara, Mathieu Lisart 2018-08-14
10049982 Method for forming at least one electrical discontinuity in an interconnection part of an integrated circuit without addition of additional material, and corresponding integrated circuit Christian Rivero, Pascal Fornara, Mathieu Lisart 2018-08-14
10043741 Low-dispersion component in an electronic chip François Tailliet 2018-08-07
9899476 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses Pascal Fornara, Christian Rivero 2018-02-20
9780045 Method for fabrication of an integrated circuit rendering a reverse engineering of the integrated circuit more difficult and corresponding integrated circuit Pascal Fornara, Christian Rivero 2017-10-03
9640493 Method for fabrication of an integrated circuit rendering a reverse engineering of the integrated circuit more difficult and corresponding integrated circuit Pascal Fornara, Christian Rivero 2017-05-02
9269771 Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses Christian Rivero, Pascal Fornara 2016-02-23
9263518 Component, for example NMOS transistor, with active region with relaxed compression stresses, and fabrication method Christian Rivero, Pascal Fornara 2016-02-16
8914756 Process for fabricating an integrated circuit comprising an analog block and a digital block, and corresponding integrated circuit 2014-12-16
8881090 Method for fabrication of an integrated circuit in a technology reduced with respect to a native technology, and corresponding integrated circuit Virginie Bidal 2014-11-04
6780716 Chip differentiation at the level of a reticle Luc Wuidart, Michel Bardouillet 2004-08-24