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Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant |
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Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal |
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Device for producing a monocrystal by crystallizing said monocrystal in a melting area |
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Apparatus and process for producing a crystal of semiconductor material |
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Method and apparatus for producing a single crystal |
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Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm |
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