FW

Fu-Cheng Wang

NS National Semiconductor: 12 patents #138 of 2,238Top 7%
MS Mstar Semiconductor: 3 patents #146 of 622Top 25%
NU National Taiwan University: 2 patents #404 of 2,195Top 20%
NU National Yang Ming Chiao Tung University: 1 patents #110 of 406Top 30%
TU Tatung University: 1 patents #28 of 55Top 55%
Overall (All Time): #234,871 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11744762 Gait activity learning assistance system and the application method thereof Chung-Huang Yu, Po-Yin Chen, Hsiao-Kuan Wu, Yu-You Lin, Kai WU 2023-09-05
10381670 Hydrogen production system 2019-08-13
8849221 Direct conversion transmitter and communication system utilizing the same Shuo-Yuan Hsiao, Yuan-Yu Fu, Yao-Chi Wang, Sheng-Che Tseng 2014-09-30
8411344 Electrical control light valve apparatus having liquid metal Tsung-Hui Tsai, Chih-Ming Ho, Chi-Te Liang 2013-04-02
8188683 Poly-chromatic light-emitting diode (LED) lighting system Bin Huang, Chun-Wen Tang 2012-05-29
8129262 Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage Constantin Bulucea, Prasad Chaparala 2012-03-06
8120531 Signal processing apparatus for multi-mode satellite positioning system and method thereof Chao-Tung Yang, ShouFang Chen, Shuo-Yuan Hsiao 2012-02-21
7944265 Clock generator, method for generating clock signal and fractional phase lock loop thereof Christopher Tin Sing Lam, Shou-Fang Chen 2011-05-17
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Chih Sieh Teng, Constantin Bulucea, Chin-Miin Shyu, Prasad Chaparala 2011-02-01
7785971 Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage Constantin Bulucea, Prasad Chaparala 2010-08-31
7701005 Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics Constantin Bulucea, Prasad Chaparala 2010-04-20
7700980 Structure and fabrication of field-effect transistor for alleviating short-channel effects Constantin Bulucea, Prasad Chaparala 2010-04-20
7595244 Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics Constantin Bulucea, Prasad Chaparala 2009-09-29
7145191 P-channel field-effect transistor with reduced junction capacitance Chih Sieh Teng, Constantin Bulucea, Chin-Miin Shyu, Prasad Chaparala 2006-12-05
6797576 Fabrication of p-channel field-effect transistor for reducing junction capacitance Chih Sieh Teng, Constantin Bulucea, Chin-Miin Shyu, Prasad Chaparala 2004-09-28
6599804 Fabrication of field-effect transistor for alleviating short-channel effects Constantin Bulucea, Prasad Chaparala 2003-07-29
6566204 Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors Constantin Bulucea 2003-05-20
6548842 Field-effect transistor for alleviating short-channel effects Constantin Bulucea, Prasad Chaparala 2003-04-15
6461932 Semiconductor trench isolation process that utilizes smoothening layer 2002-10-08