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Electrical control light valve apparatus having liquid metal |
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Poly-chromatic light-emitting diode (LED) lighting system |
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Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage |
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Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage |
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Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics |
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Structure and fabrication of field-effect transistor for alleviating short-channel effects |
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Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics |
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P-channel field-effect transistor with reduced junction capacitance |
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Fabrication of p-channel field-effect transistor for reducing junction capacitance |
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Fabrication of field-effect transistor for alleviating short-channel effects |
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Field-effect transistor for alleviating short-channel effects |
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— |
2002-10-08 |