BE

Brenda A. Everitt

ST Seagate Technology: 10 patents #565 of 4,626Top 15%
NI Nonvolatile Electronics, Incorporated: 4 patents #3 of 8Top 40%
NV Nve: 2 patents #10 of 24Top 45%
📍 Minneapolis, MN: #359 of 6,114 inventorsTop 6%
🗺 Minnesota: #4,601 of 52,454 inventorsTop 9%
Overall (All Time): #302,073 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
RE47583 Circuit selection of magnetic memory cells and related cell structures James M. Daughton, Arthur V. Pohm 2019-08-27
6930865 Magnetoresistive read sensor with short permanent magnets Mai Ghaly, David J. Larson, Paul E. Anderson, Kristin Duxstad, Patrick J. Moran +2 more 2005-08-16
6738236 Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature Sining Mao, Anthony M. Mack, Edward S. Murdock, Zheng Gao 2004-05-18
6709696 Stabilization of GMR devices Arthur V. Pohm 2004-03-23
6580587 Quad-layer GMR sandwich 2003-06-17
6556388 Differential VGMR sensor Taras Grigorievich Pokhil 2003-04-29
6548114 Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy Sining Mao, Anthony M. Mack, Edward S. Murdock, Zheng Gao 2003-04-15
6455177 Stabilization of GMR devices Arthur V. Pohm 2002-09-24
6364743 Composite lapping monitor resistor Ladislav R. Pust 2002-04-02
6356420 Storage system having read head utilizing GMR and AMr effects 2002-03-12
6349053 Spin dependent tunneling memory James M. Daughton, Arthur V. Pohm 2002-02-19
6275411 Spin dependent tunneling memory James M. Daughton, Arthur V. Pohm 2001-08-14
6191926 Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer Johannes Van Ek 2001-02-20
6021065 Spin dependent tunneling memory James M. Daughton, Arthur V. Pohm 2000-02-01
5966322 Giant magnetoresistive effect memory cell Arthur V. Pohm 1999-10-12
5949707 Giant magnetoresistive effect memory cell Arthur V. Pohm 1999-09-07