AP

Arthur V. Pohm

NV Nve: 15 patents #2 of 24Top 9%
NI Nonvolatile Electronics, Incorporated: 13 patents #1 of 8Top 15%
HO Honeywell: 3 patents #3,629 of 14,447Top 30%
ST Seagate Technology: 2 patents #1,946 of 4,626Top 45%
Overall (All Time): #108,597 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 25 most recent of 33 patents

Patent #TitleCo-InventorsDate
RE47583 Circuit selection of magnetic memory cells and related cell structures James M. Daughton, Brenda A. Everitt 2019-08-27
RE44878 Current switched magnetoresistive memory cell James M. Daughton, Mark C. Tondra 2014-05-06
7813165 Magnetic memory layers thermal pulse transitions James M. Daughton 2010-10-12
7266013 Magnetic memory layers thermal pulse transitions James M. Daughton 2007-09-04
7177178 magnetic memory layers thermal pulse transitions James M. Daughton 2007-02-13
7148531 Magnetoresistive memory SOI cell James M. Daughton, James Geza Deak 2006-12-12
7023723 Magnetic memory layers thermal pulse transitions James M. Daughton 2006-04-04
6963098 Thermally operated switch control memory cell James M. Daughton 2005-11-08
6777730 Antiparallel magnetoresistive memory cells James M. Daughton, Dexin Wang 2004-08-17
6744086 Current switched magnetoresistive memory cell James M. Daughton, Mark C. Tondra 2004-06-01
6709696 Stabilization of GMR devices Brenda A. Everitt 2004-03-23
6674664 Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells 2004-01-06
6538921 Circuit selection of magnetic memory cells and related cell structures James M. Daughton 2003-03-25
6535416 Magnetic memory coincident thermal pulse data storage James M. Daughton 2003-03-18
6455177 Stabilization of GMR devices Brenda A. Everitt 2002-09-24
6404191 Read heads in planar monolithic integrated circuit chips James M. Daughton 2002-06-11
6349053 Spin dependent tunneling memory James M. Daughton, Brenda A. Everitt 2002-02-19
6340886 Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface James M. Daughton 2002-01-22
6275411 Spin dependent tunneling memory James M. Daughton, Brenda A. Everitt 2001-08-14
6147900 Spin dependent tunneling memory 2000-11-14
6072382 Spin dependent tunneling sensor James M. Daughton, Mark C. Tondra 2000-06-06
6021065 Spin dependent tunneling memory James M. Daughton, Brenda A. Everitt 2000-02-01
5966322 Giant magnetoresistive effect memory cell Brenda A. Everitt 1999-10-12
5949707 Giant magnetoresistive effect memory cell Brenda A. Everitt 1999-09-07
5892708 Magnetoresistive memory using large fraction of memory cell films for data storage 1999-04-06