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Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity |
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Growth of A-B crystals without crystal lattice curvature |
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| 11505847 |
Method and apparatus for Ga-recovery |
Thomas Sowden Reinhold, Stefan Eichler, Oliver Zeidler, Michael Stelter |
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Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity |
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Growth of A-B crystals without crystal lattice curvature |
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Process for producing a gallium arsenide substrate which includes marangoni drying |
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| 9181633 |
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Manfred Jurisch, Stefan Eichler, Thomas Bünger, Frank Börner |
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Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cells |
Manfred Jurisch, Stefan Eichler |
2015-08-11 |
| 8025729 |
Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer |
Manfred Jurisch, Stefan Eichler, Thomas Bünger, Frank Börner |
2011-09-27 |
| 6712904 |
Device for producing single crystals |
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| 6358315 |
Method and apparatus for producing monocrystals |
Eckhard Küssel, Thomas Bünger, Tilo Flade, Klaus Sonnenberg |
2002-03-19 |