SE

Stefan Eichler

FG Freiberger Compound Materials Gmbh: 17 patents #1 of 57Top 2%
Overall (All Time): #243,758 of 4,157,543Top 6%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
12205815 Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity Wolfram Fliegel, Christoph Klement, Christa Willnauer, Max Scheffer-Czygan, André Kleinwechter +2 more 2025-01-21
11965266 Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations Michael Rosch, Dmitry Suptel, Ulrich Kretzer, Berndt Weinert 2024-04-23
11505847 Method and apparatus for Ga-recovery Thomas Sowden Reinhold, Berndt Weinert, Oliver Zeidler, Michael Stelter 2022-11-22
11170989 Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity Wolfram Fliegel, Christoph Klement, Christa Willnauer, Max Scheffer-Czygan, André Kleinwechter +2 more 2021-11-09
10460924 Process for producing a gallium arsenide substrate which includes marangoni drying Wolfram Fliegel, Christoph Klement, Christa Willnauer, Max Scheffer-Czygan, André Kleinwechter +2 more 2019-10-29
9856579 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy Gunnar Leibiger, Frank Habel 2018-01-02
9368585 Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal Thomas Bünger, Michael Butter, Rico Rühmann, Max Scheffer-Czygan 2016-06-14
9181633 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer Manfred Jurisch, Thomas Bünger, Berndt Weinert, Frank Börner 2015-11-10
9103048 Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cells Berndt Weinert, Manfred Jurisch 2015-08-11
9074297 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy Gunnar Leibiger, Frank Habel 2015-07-07
8815392 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient Ulrich Kretzer, Frank Börner, Frieder Kropfgans 2014-08-26
8771560 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal Ulrich Kretzer, Thomas Bünger 2014-07-08
8652253 Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal Thomas Bünger, Michael Butter, Rico Rühmann, Max Scheffer-Czygan 2014-02-18
8329295 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient Ulrich Kretzer, Frank Börner, Frieder Kropfgans 2012-12-11
8048224 Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate Gunnar Leibiger, Frank Habel 2011-11-01
8025729 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer Manfred Jurisch, Thomas Bünger, Berndt Weinert, Frank Börner 2011-09-27
7410540 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal Ulrich Kretzer, Thomas Bünger 2008-08-12
6355910 Heating element for heating crucibles and arrangement of heating elements Albrecht Seidl, Andreas Kohler 2002-03-12